Growth and characterization of oxide buffer layers for YBCO coated conductors

M. W. Rupich; W. Palm; W. Zhang; E. Siegal; S. Annavarapu; L. Fritzemeier; M. D. Teplitsky; C. Thieme; M. Paranthaman

doi:10.1109/77.784684

Growth and characterization of oxide buffer layers for YBCO coated conductors

M. W. Rupich, W. Palm, W. Zhang, E. Siegal, S. Annavarapu, L. Fritzemeier, M. D. Teplitsky, C. Thieme, M. Paranthaman

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Metal oxide films were grown on single crystal oxide substrates and deformation textured metal substrates by a metal organic deposition technique using metal alkoxides as the starting precursor materials. The crystallinity, grain alignment, and morphology of the oxide films depend on the process conditions and the substrate properties. Epitaxial oxide films were grown under a range of oxygen partial pressures and temperatures required for film formation on technologically important metal substrates. YBCO films grown on epitaxial LaAIO3 buffer layers on single crystal SrTiO3 had Jc's of 2.2 MA/cm2 (77K, self-field) demonstrating the quality of the MOD derived oxide films.

Original language	English
Pages (from-to)	1527-1530
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	9
Issue number	2 PART 2
DOIs	https://doi.org/10.1109/77.784684
State	Published - 1999

Funding

Manuscript received September 14, 1998. This work was supported in part by the U.S. Department of Energy under Contract No. DE-FG02-97ER82324. and the U.S. Department of Energy, Division of Materials Sciences, Office of Basic Energy Sciences and Office of Energy Efficiency and Renewable Energy, Office of Utility Technology-Superconductivity Program. The Oak Ridge National Laboratory was managed by Lockheed Martin Energy Research Corporation for the U.S. DOE under contract # DE-AC05-960R22464.

Funders	Funder number
Division of Materials Sciences
Lockheed Martin Energy Research Corporation
Office of Utility Technology-Superconductivity Program
U.S. Department of Energy	DE-AC05-960R22464, DE-FG02-97ER82324
Office of Energy Efficiency and Renewable Energy
Basic Energy Sciences

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@article{4363e34cf3a942039b2821504aae2fb0,

title = "Growth and characterization of oxide buffer layers for YBCO coated conductors",

abstract = "Metal oxide films were grown on single crystal oxide substrates and deformation textured metal substrates by a metal organic deposition technique using metal alkoxides as the starting precursor materials. The crystallinity, grain alignment, and morphology of the oxide films depend on the process conditions and the substrate properties. Epitaxial oxide films were grown under a range of oxygen partial pressures and temperatures required for film formation on technologically important metal substrates. YBCO films grown on epitaxial LaAIO3 buffer layers on single crystal SrTiO3 had Jc's of 2.2 MA/cm2 (77K, self-field) demonstrating the quality of the MOD derived oxide films.",

author = "Rupich, {M. W.} and W. Palm and W. Zhang and E. Siegal and S. Annavarapu and L. Fritzemeier and Teplitsky, {M. D.} and C. Thieme and M. Paranthaman",

year = "1999",

doi = "10.1109/77.784684",

language = "English",

volume = "9",

pages = "1527--1530",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2 PART 2",

}

TY - JOUR

T1 - Growth and characterization of oxide buffer layers for YBCO coated conductors

AU - Rupich, M. W.

AU - Palm, W.

AU - Zhang, W.

AU - Siegal, E.

AU - Annavarapu, S.

AU - Fritzemeier, L.

AU - Teplitsky, M. D.

AU - Thieme, C.

AU - Paranthaman, M.

PY - 1999

Y1 - 1999

N2 - Metal oxide films were grown on single crystal oxide substrates and deformation textured metal substrates by a metal organic deposition technique using metal alkoxides as the starting precursor materials. The crystallinity, grain alignment, and morphology of the oxide films depend on the process conditions and the substrate properties. Epitaxial oxide films were grown under a range of oxygen partial pressures and temperatures required for film formation on technologically important metal substrates. YBCO films grown on epitaxial LaAIO3 buffer layers on single crystal SrTiO3 had Jc's of 2.2 MA/cm2 (77K, self-field) demonstrating the quality of the MOD derived oxide films.

AB - Metal oxide films were grown on single crystal oxide substrates and deformation textured metal substrates by a metal organic deposition technique using metal alkoxides as the starting precursor materials. The crystallinity, grain alignment, and morphology of the oxide films depend on the process conditions and the substrate properties. Epitaxial oxide films were grown under a range of oxygen partial pressures and temperatures required for film formation on technologically important metal substrates. YBCO films grown on epitaxial LaAIO3 buffer layers on single crystal SrTiO3 had Jc's of 2.2 MA/cm2 (77K, self-field) demonstrating the quality of the MOD derived oxide films.

UR - http://www.scopus.com/inward/record.url?scp=0032655605&partnerID=8YFLogxK

U2 - 10.1109/77.784684

DO - 10.1109/77.784684

M3 - Article

AN - SCOPUS:0032655605

SN - 1051-8223

VL - 9

SP - 1527

EP - 1530

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 2 PART 2

ER -

Growth and characterization of oxide buffer layers for YBCO coated conductors

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