Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100)

Ho Nyung Lee; Stephan Senz; Nikolai D. Zakharov; Catalin Harnagea; Alain Pignolet; Dietrich Hesse; Ulrich Gösele

doi:10.1063/1.1324982

Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi₂Ta₂O₉ films on buffered Si(100)

Ho Nyung Lee, Stephan Senz, Nikolai D. Zakharov, Catalin Harnagea, Alain Pignolet, Dietrich Hesse, Ulrich Gösele

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39 Scopus citations

Abstract

We have grown non-c-oriented SrBi₂Ta₂O₉ (SBT) epitaxial thin films with well-defined (116) orientation by pulsed laser deposition on yttria-stabilized zirconia-buffered (YSZ-buffered) Si(100) substrates covered with electrically conductive (110)-oriented SrRuO₃ (SRO) bottom electrodes. The epitaxial growth of (110)-oriented SRO films on (100)-oriented YSZ on Si(100) was confirmed both by x-ray pole figures and transmission electron microscopy (TEM) analyses showing a diagonal-type rectangle-on-cube epitaxy of SRO on YSZ with respect to the substrate and yielding specific multiple twins which originate from the particular in-plane positioning of SRO on YSZ. Cross-sectional TEM analyses revealed a roof-like morphology at the SBT/SRO interface while the other interfaces are sharp. The ferroelectric measurements of the (116)-oriented SBT films show a remanent polarization (2P_r) of 6.8 μC/cm² and a coercive field (2E_c) of 142 kV/cm for a maximum applied electric field of 283 kV/cm. A comparable hysteresis loop recorded from local piezoresponse by an atomic force microscope working in a piezoelectric mode has also been obtained.

Original language	English
Pages (from-to)	3260-3262
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	20
DOIs	https://doi.org/10.1063/1.1324982
State	Published - Nov 13 2000
Externally published	Yes

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title = "Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100)",

abstract = "We have grown non-c-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with well-defined (116) orientation by pulsed laser deposition on yttria-stabilized zirconia-buffered (YSZ-buffered) Si(100) substrates covered with electrically conductive (110)-oriented SrRuO3 (SRO) bottom electrodes. The epitaxial growth of (110)-oriented SRO films on (100)-oriented YSZ on Si(100) was confirmed both by x-ray pole figures and transmission electron microscopy (TEM) analyses showing a diagonal-type rectangle-on-cube epitaxy of SRO on YSZ with respect to the substrate and yielding specific multiple twins which originate from the particular in-plane positioning of SRO on YSZ. Cross-sectional TEM analyses revealed a roof-like morphology at the SBT/SRO interface while the other interfaces are sharp. The ferroelectric measurements of the (116)-oriented SBT films show a remanent polarization (2Pr) of 6.8 μC/cm2 and a coercive field (2Ec) of 142 kV/cm for a maximum applied electric field of 283 kV/cm. A comparable hysteresis loop recorded from local piezoresponse by an atomic force microscope working in a piezoelectric mode has also been obtained.",

author = "Lee, {Ho Nyung} and Stephan Senz and Zakharov, {Nikolai D.} and Catalin Harnagea and Alain Pignolet and Dietrich Hesse and Ulrich G{\"o}sele",

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doi = "10.1063/1.1324982",

language = "English",

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T1 - Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100)

AU - Lee, Ho Nyung

AU - Senz, Stephan

AU - Zakharov, Nikolai D.

AU - Harnagea, Catalin

AU - Pignolet, Alain

AU - Hesse, Dietrich

AU - Gösele, Ulrich

PY - 2000/11/13

Y1 - 2000/11/13

N2 - We have grown non-c-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with well-defined (116) orientation by pulsed laser deposition on yttria-stabilized zirconia-buffered (YSZ-buffered) Si(100) substrates covered with electrically conductive (110)-oriented SrRuO3 (SRO) bottom electrodes. The epitaxial growth of (110)-oriented SRO films on (100)-oriented YSZ on Si(100) was confirmed both by x-ray pole figures and transmission electron microscopy (TEM) analyses showing a diagonal-type rectangle-on-cube epitaxy of SRO on YSZ with respect to the substrate and yielding specific multiple twins which originate from the particular in-plane positioning of SRO on YSZ. Cross-sectional TEM analyses revealed a roof-like morphology at the SBT/SRO interface while the other interfaces are sharp. The ferroelectric measurements of the (116)-oriented SBT films show a remanent polarization (2Pr) of 6.8 μC/cm2 and a coercive field (2Ec) of 142 kV/cm for a maximum applied electric field of 283 kV/cm. A comparable hysteresis loop recorded from local piezoresponse by an atomic force microscope working in a piezoelectric mode has also been obtained.

AB - We have grown non-c-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with well-defined (116) orientation by pulsed laser deposition on yttria-stabilized zirconia-buffered (YSZ-buffered) Si(100) substrates covered with electrically conductive (110)-oriented SrRuO3 (SRO) bottom electrodes. The epitaxial growth of (110)-oriented SRO films on (100)-oriented YSZ on Si(100) was confirmed both by x-ray pole figures and transmission electron microscopy (TEM) analyses showing a diagonal-type rectangle-on-cube epitaxy of SRO on YSZ with respect to the substrate and yielding specific multiple twins which originate from the particular in-plane positioning of SRO on YSZ. Cross-sectional TEM analyses revealed a roof-like morphology at the SBT/SRO interface while the other interfaces are sharp. The ferroelectric measurements of the (116)-oriented SBT films show a remanent polarization (2Pr) of 6.8 μC/cm2 and a coercive field (2Ec) of 142 kV/cm for a maximum applied electric field of 283 kV/cm. A comparable hysteresis loop recorded from local piezoresponse by an atomic force microscope working in a piezoelectric mode has also been obtained.

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Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi₂Ta₂O₉ films on buffered Si(100)

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