Growth and atomic structure of epitaxial Si films on Ge(111)

D. S. Lin; Hawoong Hong; T. Miller; T. C. Chiang

doi:10.1016/0039-6028(94)90819-2

Growth and atomic structure of epitaxial Si films on Ge(111)

D. S. Lin, Hawoong Hong, T. Miller, T. C. Chiang

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11 Scopus citations

Abstract

Heteroepitaxial growth by molecular beam epitaxy of thin Si films on the Ge(111) surface was studied. The surface morphology and atomic structure were examined by scanning tunneling microscopy and synchrotron-radiation photoemission. For submonolayer Si coverages on the Ge(111) substrate at room temperature, the impinging Si atoms condense to form small islands. The areas surrounding the islands remain c(2×8). Post annealing or growth at high temperatures causes Si indiffusion and Ge segregation to the surface. Multilayer deposition at high temperatures can be described as a mixed two- and three-dimensional growth. Many small three-dimensional islands are observed on a two-dimensional film. The surface structure of the film shows partial disorder, and the film itself contains numerous defects caused by the lattice mismatch between Si and Ge. The role of the segregated Ge as a surfactant in the growth is discussed.

Original language	English
Pages (from-to)	213-220
Number of pages	8
Journal	Surface Science
Volume	312
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(94)90819-2
State	Published - Jun 1 1994
Externally published	Yes

Funding

This material is based upon work supported by the US Department of Energy (Division of Materials Sciences, Office of Basic Energy Sciences), under Grant No. DEFG02-91ER45439. Acknowledgement is also made to the Donors of the Petroleum Research Fund, administered by the American Chemical Society, and to the US National Science Foundation (Grant No. DMR-92-23546) for partial support of the beam line operation and personnel. The Synchrotron Radiation Center of the University of Wisconsin at Madison is supported by the National Science Foundation.

Funders	Funder number
National Science Foundation	DMR-92-23546
U.S. Department of Energy
American Chemical Society
Basic Energy Sciences	DEFG02-91ER45439

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10.1016/0039-6028(94)90819-2

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@article{0734f1b6c97a4719940e3f20b489ffd5,

title = "Growth and atomic structure of epitaxial Si films on Ge(111)",

abstract = "Heteroepitaxial growth by molecular beam epitaxy of thin Si films on the Ge(111) surface was studied. The surface morphology and atomic structure were examined by scanning tunneling microscopy and synchrotron-radiation photoemission. For submonolayer Si coverages on the Ge(111) substrate at room temperature, the impinging Si atoms condense to form small islands. The areas surrounding the islands remain c(2×8). Post annealing or growth at high temperatures causes Si indiffusion and Ge segregation to the surface. Multilayer deposition at high temperatures can be described as a mixed two- and three-dimensional growth. Many small three-dimensional islands are observed on a two-dimensional film. The surface structure of the film shows partial disorder, and the film itself contains numerous defects caused by the lattice mismatch between Si and Ge. The role of the segregated Ge as a surfactant in the growth is discussed.",

author = "Lin, {D. S.} and Hawoong Hong and T. Miller and Chiang, {T. C.}",

year = "1994",

month = jun,

day = "1",

doi = "10.1016/0039-6028(94)90819-2",

language = "English",

volume = "312",

pages = "213--220",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Growth and atomic structure of epitaxial Si films on Ge(111)

AU - Lin, D. S.

AU - Hong, Hawoong

AU - Miller, T.

AU - Chiang, T. C.

PY - 1994/6/1

Y1 - 1994/6/1

N2 - Heteroepitaxial growth by molecular beam epitaxy of thin Si films on the Ge(111) surface was studied. The surface morphology and atomic structure were examined by scanning tunneling microscopy and synchrotron-radiation photoemission. For submonolayer Si coverages on the Ge(111) substrate at room temperature, the impinging Si atoms condense to form small islands. The areas surrounding the islands remain c(2×8). Post annealing or growth at high temperatures causes Si indiffusion and Ge segregation to the surface. Multilayer deposition at high temperatures can be described as a mixed two- and three-dimensional growth. Many small three-dimensional islands are observed on a two-dimensional film. The surface structure of the film shows partial disorder, and the film itself contains numerous defects caused by the lattice mismatch between Si and Ge. The role of the segregated Ge as a surfactant in the growth is discussed.

AB - Heteroepitaxial growth by molecular beam epitaxy of thin Si films on the Ge(111) surface was studied. The surface morphology and atomic structure were examined by scanning tunneling microscopy and synchrotron-radiation photoemission. For submonolayer Si coverages on the Ge(111) substrate at room temperature, the impinging Si atoms condense to form small islands. The areas surrounding the islands remain c(2×8). Post annealing or growth at high temperatures causes Si indiffusion and Ge segregation to the surface. Multilayer deposition at high temperatures can be described as a mixed two- and three-dimensional growth. Many small three-dimensional islands are observed on a two-dimensional film. The surface structure of the film shows partial disorder, and the film itself contains numerous defects caused by the lattice mismatch between Si and Ge. The role of the segregated Ge as a surfactant in the growth is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0028447165&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(94)90819-2

DO - 10.1016/0039-6028(94)90819-2

M3 - Article

AN - SCOPUS:0028447165

SN - 0039-6028

VL - 312

SP - 213

EP - 220

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Growth and atomic structure of epitaxial Si films on Ge(111)

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