Grain growth behavior of bismuth titanate thin film on metallic silicon substrates

Yanxia Lu; Walter A. Schulze; David T. Hoelzer

Grain growth behavior of bismuth titanate thin film on metallic silicon substrates

Yanxia Lu, Walter A. Schulze, David T. Hoelzer

Research output: Contribution to journal › Conference article › peer-review

Abstract

Bismuth titanate (Bi₄Ti₃O₁₂) thin films were produced from acetate precursors by spin coating deposition followed by crystallization using rapid thermal processing (RTP). Crystallographic orientation was characterized by x-ray diffraction, and indicated that it varied with the number of coating layers for the films deposited on single crystal silicon wafers. Cross sectional samples were prepared and studied by Transmission Electron Microscopy (TEM). The results showed that grains randomly nucleated at the interface where a thin amorphous silica layer was naturally formed. Grains nucleated in the [020] direction or near this direction showed a faster growth rate than that in the other directions, and eventually dominant in determining the grain orientation of the film. Preferential orientation in the [020] direction observed by TEM is identical to the XRD results for the multilayer thin films. The thickness and grain size of thin film were also investigated.

Original language	English
Pages (from-to)	607-612
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	355
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Nov 30 1994

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title = "Grain growth behavior of bismuth titanate thin film on metallic silicon substrates",

abstract = "Bismuth titanate (Bi4Ti3O12) thin films were produced from acetate precursors by spin coating deposition followed by crystallization using rapid thermal processing (RTP). Crystallographic orientation was characterized by x-ray diffraction, and indicated that it varied with the number of coating layers for the films deposited on single crystal silicon wafers. Cross sectional samples were prepared and studied by Transmission Electron Microscopy (TEM). The results showed that grains randomly nucleated at the interface where a thin amorphous silica layer was naturally formed. Grains nucleated in the [020] direction or near this direction showed a faster growth rate than that in the other directions, and eventually dominant in determining the grain orientation of the film. Preferential orientation in the [020] direction observed by TEM is identical to the XRD results for the multilayer thin films. The thickness and grain size of thin film were also investigated.",

author = "Yanxia Lu and Schulze, {Walter A.} and Hoelzer, {David T.}",

year = "1995",

language = "English",

volume = "355",

pages = "607--612",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

}

TY - JOUR

T1 - Grain growth behavior of bismuth titanate thin film on metallic silicon substrates

AU - Lu, Yanxia

AU - Schulze, Walter A.

AU - Hoelzer, David T.

PY - 1995

Y1 - 1995

N2 - Bismuth titanate (Bi4Ti3O12) thin films were produced from acetate precursors by spin coating deposition followed by crystallization using rapid thermal processing (RTP). Crystallographic orientation was characterized by x-ray diffraction, and indicated that it varied with the number of coating layers for the films deposited on single crystal silicon wafers. Cross sectional samples were prepared and studied by Transmission Electron Microscopy (TEM). The results showed that grains randomly nucleated at the interface where a thin amorphous silica layer was naturally formed. Grains nucleated in the [020] direction or near this direction showed a faster growth rate than that in the other directions, and eventually dominant in determining the grain orientation of the film. Preferential orientation in the [020] direction observed by TEM is identical to the XRD results for the multilayer thin films. The thickness and grain size of thin film were also investigated.

AB - Bismuth titanate (Bi4Ti3O12) thin films were produced from acetate precursors by spin coating deposition followed by crystallization using rapid thermal processing (RTP). Crystallographic orientation was characterized by x-ray diffraction, and indicated that it varied with the number of coating layers for the films deposited on single crystal silicon wafers. Cross sectional samples were prepared and studied by Transmission Electron Microscopy (TEM). The results showed that grains randomly nucleated at the interface where a thin amorphous silica layer was naturally formed. Grains nucleated in the [020] direction or near this direction showed a faster growth rate than that in the other directions, and eventually dominant in determining the grain orientation of the film. Preferential orientation in the [020] direction observed by TEM is identical to the XRD results for the multilayer thin films. The thickness and grain size of thin film were also investigated.

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M3 - Conference article

AN - SCOPUS:0029212871

SN - 0272-9172

VL - 355

SP - 607

EP - 612

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

Grain growth behavior of bismuth titanate thin film on metallic silicon substrates

Abstract

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