Gold, silver and copper nanocrystal formation in SiC by MeV implantation

R. L. Zimmerman; D. Ila; E. K. Williams; B. Gasic; A. Elsamadicy; A. L. Evelyn; D. B. Poker; D. K. Hensley; David J. Larkin

doi:10.1016/S0168-583X(99)01040-X

Gold, silver and copper nanocrystal formation in SiC by MeV implantation

R. L. Zimmerman, D. Ila, E. K. Williams, B. Gasic, A. Elsamadicy, A. L. Evelyn, D. B. Poker, D. K. Hensley, David J. Larkin

Nanofabrication Research Laboratory

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

Nanoclusters gold, silver and copper are produced in 6H-SiC by implanting 1.0 MeV Au, 2.0 MeV Ag and 2.0 MeV Cu into the Si face of SiC at room or elevated temperature followed by annealing at various temperatures. The absorption bands for each type of metal nanoclusters in SiC were determined using optical absorption spectrophotometry. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.

Original language	English
Pages (from-to)	892-896
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	166
DOIs	https://doi.org/10.1016/S0168-583X(99)01040-X
State	Published - May 2 2000
Event	10th International Conference on Radiation Effects in Insulators - Jena, Ger Duration: Jul 18 1999 → Jul 23 1999

Funding

This project was supported by the Center for Irradiation of Materials at Alabama A&M University and NASA-LeRC Contract No. NAG3-2123. The work at ORNL was sponsored by the Division of Materials Science, US Department of Energy, under Contract DE-AC05-96OR22464 with Lockheed Martin Energy Research Corp.

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Zimmerman, R. L., Ila, D., Williams, E. K., Gasic, B., Elsamadicy, A., Evelyn, A. L., Poker, D. B., Hensley, D. K., & Larkin, D. J. (2000). Gold, silver and copper nanocrystal formation in SiC by MeV implantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 166, 892-896. https://doi.org/10.1016/S0168-583X(99)01040-X

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abstract = "Nanoclusters gold, silver and copper are produced in 6H-SiC by implanting 1.0 MeV Au, 2.0 MeV Ag and 2.0 MeV Cu into the Si face of SiC at room or elevated temperature followed by annealing at various temperatures. The absorption bands for each type of metal nanoclusters in SiC were determined using optical absorption spectrophotometry. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.",

author = "Zimmerman, {R. L.} and D. Ila and Williams, {E. K.} and B. Gasic and A. Elsamadicy and Evelyn, {A. L.} and Poker, {D. B.} and Hensley, {D. K.} and Larkin, {David J.}",

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doi = "10.1016/S0168-583X(99)01040-X",

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note = "10th International Conference on Radiation Effects in Insulators ; Conference date: 18-07-1999 Through 23-07-1999",

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TY - JOUR

T1 - Gold, silver and copper nanocrystal formation in SiC by MeV implantation

AU - Zimmerman, R. L.

AU - Ila, D.

AU - Williams, E. K.

AU - Gasic, B.

AU - Elsamadicy, A.

AU - Evelyn, A. L.

AU - Poker, D. B.

AU - Hensley, D. K.

AU - Larkin, David J.

PY - 2000/5/2

Y1 - 2000/5/2

N2 - Nanoclusters gold, silver and copper are produced in 6H-SiC by implanting 1.0 MeV Au, 2.0 MeV Ag and 2.0 MeV Cu into the Si face of SiC at room or elevated temperature followed by annealing at various temperatures. The absorption bands for each type of metal nanoclusters in SiC were determined using optical absorption spectrophotometry. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.

AB - Nanoclusters gold, silver and copper are produced in 6H-SiC by implanting 1.0 MeV Au, 2.0 MeV Ag and 2.0 MeV Cu into the Si face of SiC at room or elevated temperature followed by annealing at various temperatures. The absorption bands for each type of metal nanoclusters in SiC were determined using optical absorption spectrophotometry. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.

UR - http://www.scopus.com/inward/record.url?scp=0033728873&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)01040-X

DO - 10.1016/S0168-583X(99)01040-X

M3 - Conference article

AN - SCOPUS:0033728873

SN - 0168-583X

VL - 166

SP - 892

EP - 896

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - 10th International Conference on Radiation Effects in Insulators

Y2 - 18 July 1999 through 23 July 1999

ER -

Gold, silver and copper nanocrystal formation in SiC by MeV implantation

Abstract

Funding

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