Giant Topological Hall Effect and Colossal Magnetoresistance in Heusler Ferromagnet near Room Temperature

Premakumar Yanda; Leila Noohinejad; Ning Mao; Nikolai Peshcherenko; Kazuki Imasato; Abhay K. Srivastava; Yicheng Guan; Bimalesh Giri; Avdhesh Kumar Sharma; Kaustuv Manna; Stuart S.P. Parkin; Yang Zhang; Chandra Shekhar; Claudia Felser

doi:10.1002/adma.202411240

Giant Topological Hall Effect and Colossal Magnetoresistance in Heusler Ferromagnet near Room Temperature

Premakumar Yanda
, Leila Noohinejad
, Ning Mao
, Nikolai Peshcherenko
, Kazuki Imasato
, Abhay K. Srivastava
, Yicheng Guan
, Bimalesh Giri
, Avdhesh Kumar Sharma
, Kaustuv Manna
, Stuart S.P. Parkin
, Yang Zhang
, Chandra Shekhar
, Claudia Felser

Materials Theory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Colossal magnetoresistance (CMR) is an exotic phenomenon that allows for the efficient magnetic control of electrical resistivity and has attracted significant attention in condensed matter due to its potential for memory and spintronic applications. Heusler alloys are the subject of considerable interest in this context due to the electronic properties that result from the nontrivial band topology. Here, the observation of CMR near room temperature is reported in the shape memory Heusler alloy Ni₂Mn_1.4In_0.6, which is attributed to the combined effects of magnetic field-induced martensite twin variant reorientation (MFIR) and magnetic field-induced structural phase transformation (MFIPT). This compound undergoes a structural phase transition from a cubic (austenite-L2₁) ferromagnetic (FM) to a monoclinic (martensite) antiferromagnetic (AFM), which leads to an effective increase in the size of the Fermi surface and consequently in CMR. Additionally, it exhibits significant anomalous Hall conductivity in both antiferromagnetic and ferromagnetic phases. Furthermore, it demonstrates a giant topological Hall resistivity (THR) (Formula presented.) ≈6 µΩ.cm in the vicinity of martensite transition due to the enhanced spin chirality resulting from the formation of magnetic domains with Bloch-type domain walls. The findings contribute to the understanding of the magnetotransport of Ni-Mn-In Heusler alloys, which are prospective candidates for room-temperature spintronic applications.

Original language	English
Article number	2411240
Journal	Advanced Materials
Volume	37
Issue number	3
DOIs	https://doi.org/10.1002/adma.202411240
State	Published - Jan 22 2025

Funding

This work was financially supported by the European Union's Horizon 2020 research and innovation program (grant No. 766566); Deutsche Forschungsgemeinschaft (DFG) under SFB1143 (Project No. 247310070); the European Research Council (ERC) Advanced Grant No.742068 (“TOPMAT”) and the Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter – ct.qmat (EXC2147, project no. 390858490). C.F. acknowledges the support of FOR5249 (QUAST) led by DFG, German Research Foundation. The authors acknowledge DESY (Hamburg, Germany), a member of the Helmholtz Association HGF, for the provision of experimental facilities. Parts of this research were carried out at P24, Chemical Crystallography beamline. Beamtime was allocated for the proposal Xm-20010566. Open access funding enabled and organized by Projekt DEAL. This work was financially supported by the European Union's Horizon 2020 research and innovation program (grant No. 766566); Deutsche Forschungsgemeinschaft (DFG) under SFB1143 (Project No. 247310070); the European Research Council (ERC) Advanced Grant No.742068 (“TOPMAT”) and the Würzburg‐Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter – ct.qmat (EXC2147, project no. 390858490). C.F. acknowledges the support of FOR5249 (QUAST) led by DFG, German Research Foundation. The authors acknowledge DESY (Hamburg, Germany), a member of the Helmholtz Association HGF, for the provision of experimental facilities. Parts of this research were carried out at P24, Chemical Crystallography beamline. Beamtime was allocated for the proposal Xm‐20010566.

Keywords

colossal magnetoresistance
ferromagnetism
martensite structure
shape memory alloy
topological Hall effect

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10.1002/adma.202411240

Cite this

Yanda, P., Noohinejad, L., Mao, N., Peshcherenko, N., Imasato, K., Srivastava, A. K., Guan, Y., Giri, B., Sharma, A. K., Manna, K., Parkin, S. S. P., Zhang, Y., Shekhar, C., & Felser, C. (2025). Giant Topological Hall Effect and Colossal Magnetoresistance in Heusler Ferromagnet near Room Temperature. Advanced Materials, 37(3), Article 2411240. https://doi.org/10.1002/adma.202411240

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abstract = "Colossal magnetoresistance (CMR) is an exotic phenomenon that allows for the efficient magnetic control of electrical resistivity and has attracted significant attention in condensed matter due to its potential for memory and spintronic applications. Heusler alloys are the subject of considerable interest in this context due to the electronic properties that result from the nontrivial band topology. Here, the observation of CMR near room temperature is reported in the shape memory Heusler alloy Ni2Mn1.4In0.6, which is attributed to the combined effects of magnetic field-induced martensite twin variant reorientation (MFIR) and magnetic field-induced structural phase transformation (MFIPT). This compound undergoes a structural phase transition from a cubic (austenite-L21) ferromagnetic (FM) to a monoclinic (martensite) antiferromagnetic (AFM), which leads to an effective increase in the size of the Fermi surface and consequently in CMR. Additionally, it exhibits significant anomalous Hall conductivity in both antiferromagnetic and ferromagnetic phases. Furthermore, it demonstrates a giant topological Hall resistivity (THR) (Formula presented.) ≈6 µΩ.cm in the vicinity of martensite transition due to the enhanced spin chirality resulting from the formation of magnetic domains with Bloch-type domain walls. The findings contribute to the understanding of the magnetotransport of Ni-Mn-In Heusler alloys, which are prospective candidates for room-temperature spintronic applications.",

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AU - Yanda, Premakumar

AU - Noohinejad, Leila

AU - Mao, Ning

AU - Peshcherenko, Nikolai

AU - Imasato, Kazuki

AU - Srivastava, Abhay K.

AU - Guan, Yicheng

AU - Giri, Bimalesh

AU - Sharma, Avdhesh Kumar

AU - Manna, Kaustuv

AU - Parkin, Stuart S.P.

AU - Zhang, Yang

AU - Shekhar, Chandra

AU - Felser, Claudia

PY - 2025/1/22

Y1 - 2025/1/22

N2 - Colossal magnetoresistance (CMR) is an exotic phenomenon that allows for the efficient magnetic control of electrical resistivity and has attracted significant attention in condensed matter due to its potential for memory and spintronic applications. Heusler alloys are the subject of considerable interest in this context due to the electronic properties that result from the nontrivial band topology. Here, the observation of CMR near room temperature is reported in the shape memory Heusler alloy Ni2Mn1.4In0.6, which is attributed to the combined effects of magnetic field-induced martensite twin variant reorientation (MFIR) and magnetic field-induced structural phase transformation (MFIPT). This compound undergoes a structural phase transition from a cubic (austenite-L21) ferromagnetic (FM) to a monoclinic (martensite) antiferromagnetic (AFM), which leads to an effective increase in the size of the Fermi surface and consequently in CMR. Additionally, it exhibits significant anomalous Hall conductivity in both antiferromagnetic and ferromagnetic phases. Furthermore, it demonstrates a giant topological Hall resistivity (THR) (Formula presented.) ≈6 µΩ.cm in the vicinity of martensite transition due to the enhanced spin chirality resulting from the formation of magnetic domains with Bloch-type domain walls. The findings contribute to the understanding of the magnetotransport of Ni-Mn-In Heusler alloys, which are prospective candidates for room-temperature spintronic applications.

AB - Colossal magnetoresistance (CMR) is an exotic phenomenon that allows for the efficient magnetic control of electrical resistivity and has attracted significant attention in condensed matter due to its potential for memory and spintronic applications. Heusler alloys are the subject of considerable interest in this context due to the electronic properties that result from the nontrivial band topology. Here, the observation of CMR near room temperature is reported in the shape memory Heusler alloy Ni2Mn1.4In0.6, which is attributed to the combined effects of magnetic field-induced martensite twin variant reorientation (MFIR) and magnetic field-induced structural phase transformation (MFIPT). This compound undergoes a structural phase transition from a cubic (austenite-L21) ferromagnetic (FM) to a monoclinic (martensite) antiferromagnetic (AFM), which leads to an effective increase in the size of the Fermi surface and consequently in CMR. Additionally, it exhibits significant anomalous Hall conductivity in both antiferromagnetic and ferromagnetic phases. Furthermore, it demonstrates a giant topological Hall resistivity (THR) (Formula presented.) ≈6 µΩ.cm in the vicinity of martensite transition due to the enhanced spin chirality resulting from the formation of magnetic domains with Bloch-type domain walls. The findings contribute to the understanding of the magnetotransport of Ni-Mn-In Heusler alloys, which are prospective candidates for room-temperature spintronic applications.

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KW - ferromagnetism

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KW - shape memory alloy

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ER -

Giant Topological Hall Effect and Colossal Magnetoresistance in Heusler Ferromagnet near Room Temperature

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