Giant magnetoresistance in organic spin valves

Dali Sun, Lifeng Yin, Chengjun Sun, Hangwen Guo, Zheng Gai, X. G. Zhang, T. Z. Ward, Zhaohua Cheng, Jian Shen

Research output: Contribution to journalArticlepeer-review

205 Scopus citations

Abstract

Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to ∼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

Original languageEnglish
Article number236602
JournalPhysical Review Letters
Volume104
Issue number23
DOIs
StatePublished - Jun 11 2010

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