TY - JOUR
T1 - Germanium-catalyzed growth of zinc oxide nanowires
T2 - A semiconductor catalyst for nanowire synthesis
AU - Pan, Zheng Wei
AU - Dai, Sheng
AU - Rouleau, Christopher M.
AU - Lowndes, Douglas H.
PY - 2004/12/27
Y1 - 2004/12/27
N2 - Green fields of nanowires: Germanium, a Group IV semiconductor, can act as an efficient catalyst for high-rate (up to 400 μmh-1) growth of very long (up to 200 μm), extremely straight, and quasi-aligned arrays of single-crystalline ZnO nanowires (see picture). The diameter of the Ge particles (0.5-4 μm) is about 5-15 times that of the associated nanowires (50-400 nm). The patterned growth of ZnO nanorods was achieved on photolithographically prepared Ge-dot patterns.
AB - Green fields of nanowires: Germanium, a Group IV semiconductor, can act as an efficient catalyst for high-rate (up to 400 μmh-1) growth of very long (up to 200 μm), extremely straight, and quasi-aligned arrays of single-crystalline ZnO nanowires (see picture). The diameter of the Ge particles (0.5-4 μm) is about 5-15 times that of the associated nanowires (50-400 nm). The patterned growth of ZnO nanorods was achieved on photolithographically prepared Ge-dot patterns.
KW - Catalyst
KW - Germanium
KW - Nanostructures
KW - Semiconductors
UR - http://www.scopus.com/inward/record.url?scp=11844252085&partnerID=8YFLogxK
U2 - 10.1002/anie.200460043
DO - 10.1002/anie.200460043
M3 - Article
C2 - 15614907
AN - SCOPUS:11844252085
SN - 1433-7851
VL - 44
SP - 274
EP - 278
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
IS - 2
ER -