Abstract
Bipolar doping in wide bandgap semiconductors is difficult to achieve under equilibrium conditions because of the spontaneous formation of compensating defects and unfavorable energetics for dopant substitution. In this work, we explored the use of rapid pulse thermal processing for activating nitrogen dopants into acceptor states in ZnO. Low-temperature photoluminescence spectra revealed both acceptor-bound exciton (A X0) and donor-acceptor pair emissions, which present direct evidence for acceptors generated after pulse thermal processing of nitrogen-doped ZnO. This work suggests that pulse thermal processing is potentially an effective method for p -type doping of ZnO.
Original language | English |
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Article number | 151112 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 15 |
DOIs | |
State | Published - 2008 |
Funding
Research was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725. The work at the University of Florida was sponsored by the Department of Energy/National Energy Technology Laboratory and the National Science Foundation.