Generalized Ellipsometry Measurements of Crystalline Thin Film and Bulk Tin Oxide

Gerald E. Jellison; Raphaël P. Hermann; Elliot D. Specht; Lynn A. Boatner; T. Zac Ward; Andreas Herklotz

doi:10.1002/pssa.202100378

Generalized Ellipsometry Measurements of Crystalline Thin Film and Bulk Tin Oxide

Gerald E. Jellison, Raphaël P. Hermann, Elliot D. Specht, Lynn A. Boatner, T. Zac Ward, Andreas Herklotz

Neutron & X-Ray Scattering, & Thermophys

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Several bulk and thin-film crystals of SnO₂ are grown and examined using generalized ellipsometry techniques. The bulk samples are grown using the chemical vapor transport technique and thin films of SnO₂ are grown using the pulsed laser deposition technique. The bulk samples are examined using the two-modulator generalized ellipsometry microscope (2-MGEM) at normal incidence and the spectroscopic two-modulator generalized ellipsometer (2-MGE). The spectroscopic optical functions of tin oxide are then obtained using the 2-MGE from 1.46 to 6.2 eV. The material is highly birefringent, and the ordinary bandgap is less than the extraordinary band edge. 2-MGE measurements are also made on thin-film samples of crystalline tin oxide grown on sapphire and rutile, showing no cross polarization. Because of the complicated morphology of the tin oxide films grown on sapphire, the ellipsometry data are simulated using the Tauc–Lorentz model. Films grown on rutile had the optic axis perpendicular to the sample surface, but the film is strained, resulting in a more complicated ellipsometric spectrum. These films are modeled using the air/surface roughness/tin oxide/interface/rutile model, where the roughness and interface are modeled using the incomplete Beta function.

Original language	English
Article number	2100378
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	219
Issue number	16
DOIs	https://doi.org/10.1002/pssa.202100378
State	Published - Aug 2022

Funding

G.E.J., R.P.H., and T.Z.W. acknowledge support from the Laboratory Directed Research and Development “Interfacial Thermal Transport: Advanced First Principles Modeling and Ultrafast Thermal Spectroscopy” Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the USA. Department of Energy. A.H. acknowledges support from the German Research Foundation (DFG) - Grant No. HE8737/1-1. Film synthesis was supported by the USA. Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division. G.E.J., R.P.H., and T.Z.W. acknowledge support from the Laboratory Directed Research and Development “Interfacial Thermal Transport: Advanced First Principles Modeling and Ultrafast Thermal Spectroscopy” Program of Oak Ridge National Laboratory, managed by UT‐Battelle, LLC, for the USA. Department of Energy. A.H. acknowledges support from the German Research Foundation (DFG) ‐ Grant No. HE8737/1‐1. Film synthesis was supported by the USA. Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division.

Funders	Funder number
Laboratory Directed Research and Development “Interfacial Thermal Transport
U.S. Department of Energy
California Department of Fish and Game
Basic Energy Sciences
Oak Ridge National Laboratory
Division of Materials Sciences and Engineering
Deutsche Forschungsgemeinschaft	HE8737/1‐1

Keywords

birefringence
ellipsometry modeling
generalized ellipsometry
incomplete beta function
optical functions
tin oxide

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10.1002/pssa.202100378

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title = "Generalized Ellipsometry Measurements of Crystalline Thin Film and Bulk Tin Oxide",

abstract = "Several bulk and thin-film crystals of SnO2 are grown and examined using generalized ellipsometry techniques. The bulk samples are grown using the chemical vapor transport technique and thin films of SnO2 are grown using the pulsed laser deposition technique. The bulk samples are examined using the two-modulator generalized ellipsometry microscope (2-MGEM) at normal incidence and the spectroscopic two-modulator generalized ellipsometer (2-MGE). The spectroscopic optical functions of tin oxide are then obtained using the 2-MGE from 1.46 to 6.2 eV. The material is highly birefringent, and the ordinary bandgap is less than the extraordinary band edge. 2-MGE measurements are also made on thin-film samples of crystalline tin oxide grown on sapphire and rutile, showing no cross polarization. Because of the complicated morphology of the tin oxide films grown on sapphire, the ellipsometry data are simulated using the Tauc–Lorentz model. Films grown on rutile had the optic axis perpendicular to the sample surface, but the film is strained, resulting in a more complicated ellipsometric spectrum. These films are modeled using the air/surface roughness/tin oxide/interface/rutile model, where the roughness and interface are modeled using the incomplete Beta function.",

keywords = "birefringence, ellipsometry modeling, generalized ellipsometry, incomplete beta function, optical functions, tin oxide",

author = "Jellison, {Gerald E.} and Hermann, {Rapha{\"e}l P.} and Specht, {Elliot D.} and Boatner, {Lynn A.} and {Zac Ward}, T. and Andreas Herklotz",

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AU - Zac Ward, T.

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N2 - Several bulk and thin-film crystals of SnO2 are grown and examined using generalized ellipsometry techniques. The bulk samples are grown using the chemical vapor transport technique and thin films of SnO2 are grown using the pulsed laser deposition technique. The bulk samples are examined using the two-modulator generalized ellipsometry microscope (2-MGEM) at normal incidence and the spectroscopic two-modulator generalized ellipsometer (2-MGE). The spectroscopic optical functions of tin oxide are then obtained using the 2-MGE from 1.46 to 6.2 eV. The material is highly birefringent, and the ordinary bandgap is less than the extraordinary band edge. 2-MGE measurements are also made on thin-film samples of crystalline tin oxide grown on sapphire and rutile, showing no cross polarization. Because of the complicated morphology of the tin oxide films grown on sapphire, the ellipsometry data are simulated using the Tauc–Lorentz model. Films grown on rutile had the optic axis perpendicular to the sample surface, but the film is strained, resulting in a more complicated ellipsometric spectrum. These films are modeled using the air/surface roughness/tin oxide/interface/rutile model, where the roughness and interface are modeled using the incomplete Beta function.

AB - Several bulk and thin-film crystals of SnO2 are grown and examined using generalized ellipsometry techniques. The bulk samples are grown using the chemical vapor transport technique and thin films of SnO2 are grown using the pulsed laser deposition technique. The bulk samples are examined using the two-modulator generalized ellipsometry microscope (2-MGEM) at normal incidence and the spectroscopic two-modulator generalized ellipsometer (2-MGE). The spectroscopic optical functions of tin oxide are then obtained using the 2-MGE from 1.46 to 6.2 eV. The material is highly birefringent, and the ordinary bandgap is less than the extraordinary band edge. 2-MGE measurements are also made on thin-film samples of crystalline tin oxide grown on sapphire and rutile, showing no cross polarization. Because of the complicated morphology of the tin oxide films grown on sapphire, the ellipsometry data are simulated using the Tauc–Lorentz model. Films grown on rutile had the optic axis perpendicular to the sample surface, but the film is strained, resulting in a more complicated ellipsometric spectrum. These films are modeled using the air/surface roughness/tin oxide/interface/rutile model, where the roughness and interface are modeled using the incomplete Beta function.

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Generalized Ellipsometry Measurements of Crystalline Thin Film and Bulk Tin Oxide

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