Gate-tunable, high-responsivity, and room-temperature infrared photodetectors based on a graphene-Bi2Se3 heterostructure

  • Jaeseok Kim
  • , Houk Jang
  • , Nikesh Koirala
  • , Sangwan Sim
  • , Jae Bok Lee
  • , Un Jeong Kim
  • , Hyangsook Lee
  • , Soonyoung Cha
  • , Chihun In
  • , Jun Park
  • , Jekwan Lee
  • , Matthew Brahlek
  • , Jisoo Moon
  • , Maryam Salehi
  • , Seongshik Oh
  • , Jong Hyun Ahn
  • , Sungwoo Hwang
  • , Dohun Kim
  • , Hyunyong Choi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We demonstrate infrared photodetectors based on graphene-Bi2Se3 heterostructures with high responsivity (≥1.9 A/W) at room temperature. Strong photogating effect across the tunneling barrier and built-in potential enables the internal quantum efficiency larger than 100 %.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
DOIs
StatePublished - Dec 16 2016
Externally publishedYes
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Conference

Conference2016 Conference on Lasers and Electro-Optics, CLEO 2016
Country/TerritoryUnited States
CitySan Jose
Period06/5/1606/10/16

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