Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity

Jie Xing, Evan R. Glaser, Bai Song, James C. Culbertson, Jaime A. Freitas, Ryan A. Duncan, Keith A. Nelson, Gang Chen, Ni Ni

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We have grown c-BAs single crystals up to 1000 μm size by the chemical vapor transport (CVT) technique using combined As and I2 transport agents with the As:I ratio of 1:3 under gas pressures of up to 35 atm. Raman spectroscopy revealed a very sharp (∼2.4 cm-1) P1 phonon mode and an interesting splitting behavior of P1 from detailed polarization studies. Electron paramagnetic resonance (EPR) experiments revealed no evidence for EPR active growth-related defects under the experimental resolution. Finally, a moderate thermal conductivity value of ∼132 W/m-K was obtained using a transient thermal grating technique. These results suggest that although the high As gas vapor pressure environment in CVT growth can increase the transport rate of c-BAs significantly, it may not be efficient in reducing the defects and enhancing the thermal conductivity in c-BAs significantly.

Original languageEnglish
Article number241903
JournalApplied Physics Letters
Volume112
Issue number24
DOIs
StatePublished - Jun 11 2018
Externally publishedYes

Funding

The work at UCLA and MIT was funded by the Office of Naval Research under a MURI Grant No. N00014-16-1-2436. The work at NRL was supported by the Office of Naval Research. The authors thank Alexei Maznev for many helpful discussions about using TTG to measure the BAs samples.

Fingerprint

Dive into the research topics of 'Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity'. Together they form a unique fingerprint.

Cite this