Abstract
We have grown c-BAs single crystals up to 1000 μm size by the chemical vapor transport (CVT) technique using combined As and I2 transport agents with the As:I ratio of 1:3 under gas pressures of up to 35 atm. Raman spectroscopy revealed a very sharp (∼2.4 cm-1) P1 phonon mode and an interesting splitting behavior of P1 from detailed polarization studies. Electron paramagnetic resonance (EPR) experiments revealed no evidence for EPR active growth-related defects under the experimental resolution. Finally, a moderate thermal conductivity value of ∼132 W/m-K was obtained using a transient thermal grating technique. These results suggest that although the high As gas vapor pressure environment in CVT growth can increase the transport rate of c-BAs significantly, it may not be efficient in reducing the defects and enhancing the thermal conductivity in c-BAs significantly.
Original language | English |
---|---|
Article number | 241903 |
Journal | Applied Physics Letters |
Volume | 112 |
Issue number | 24 |
DOIs | |
State | Published - Jun 11 2018 |
Externally published | Yes |
Funding
The work at UCLA and MIT was funded by the Office of Naval Research under a MURI Grant No. N00014-16-1-2436. The work at NRL was supported by the Office of Naval Research. The authors thank Alexei Maznev for many helpful discussions about using TTG to measure the BAs samples.