Abstract
Graphene and other 2D materials are attractive for nanomaterial-based devices. However, their properties are highly susceptible to adsorbed gas species on the surface, which makes it important to study gas adsorption dynamics in these materials. Here we applied laser THz emission spectroscopy (LTES) to study O2 adsorption dynamics in graphene deposited on SI-InP. THz emission from SI-InP dramatically changes upon O2 adsorption because O2 adsorbates induce local electric dipoles and modify the SI-InP surface depletion layer [1].
| Original language | English |
|---|---|
| Title of host publication | JSAP-OSA Joint Symposia, JSAP 2015 |
| Publisher | Optica Publishing Group (formerly OSA) |
| ISBN (Electronic) | 9784863485419 |
| ISBN (Print) | 9784863485419 |
| State | Published - 2015 |
| Externally published | Yes |
| Event | JSAP-OSA Joint Symposia 2015 - Nagoya, Japan Duration: Sep 13 2015 → Sep 16 2015 |
Publication series
| Name | Optics InfoBase Conference Papers |
|---|---|
| Volume | Part F132-JSAP 2015 |
| ISSN (Electronic) | 2162-2701 |
Conference
| Conference | JSAP-OSA Joint Symposia 2015 |
|---|---|
| Country/Territory | Japan |
| City | Nagoya |
| Period | 09/13/15 → 09/16/15 |
Funding
JSPS/MEXT, Air Force Office of Scientific Research (grant number FA9550-14-1-0268 and FA2386-15-1-0004), This work is partially funded by Grant-in-Aid for Scientific Research (No. 25630149 and No. 26107524), JSPS/MEXT, Air Force Office of Scientific Research (grant number FA9550-14-1-0268 and FA2386-15-1-0004), and Program for Promoting International Joint Research, Osaka University.
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