GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

June O. Song; Dong Seok Leem; Sang Ho Kim; J. S. Kwak; O. H. Nam; Y. Park; Tae Yeon Seong

doi:10.1016/j.sse.2004.02.021

GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

June O. Song, Dong Seok Leem, Sang Ho Kim, J. S. Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10^-5 Ωcm². The light transmittance of the annealed samples is about 95% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.

Original language	English
Pages (from-to)	1597-1600
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2004.02.021
State	Published - Sep 2004
Externally published	Yes

Funding

This work was supported by the Basic Research program of the Korea Science and Engineering Foundation (Grant No. R01-2002-000-00356-0).

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10.1016/j.sse.2004.02.021

Cite this

@article{272799421a7043c98862d281e078f63c,

title = "GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact",

abstract = "Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10-5 Ωcm2. The light transmittance of the annealed samples is about 95\% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.",

author = "Song, \{June O.\} and Leem, \{Dong Seok\} and Kim, \{Sang Ho\} and Kwak, \{J. S.\} and Nam, \{O. H.\} and Y. Park and Seong, \{Tae Yeon\}",

year = "2004",

month = sep,

doi = "10.1016/j.sse.2004.02.021",

language = "English",

volume = "48",

pages = "1597--1600",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "9",

}

TY - JOUR

T1 - GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

AU - Song, June O.

AU - Leem, Dong Seok

AU - Kim, Sang Ho

AU - Kwak, J. S.

AU - Nam, O. H.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2004/9

Y1 - 2004/9

N2 - Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10-5 Ωcm2. The light transmittance of the annealed samples is about 95% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.

AB - Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10-5 Ωcm2. The light transmittance of the annealed samples is about 95% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.

UR - https://www.scopus.com/pages/publications/2942648424

U2 - 10.1016/j.sse.2004.02.021

DO - 10.1016/j.sse.2004.02.021

M3 - Article

AN - SCOPUS:2942648424

SN - 0038-1101

VL - 48

SP - 1597

EP - 1600

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

Abstract

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