GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

June O. Song; Dong Seok Leem; Sang Ho Kim; J. S. Kwak; O. H. Nam; Y. Park; Tae Yeon Seong

doi:10.1016/j.sse.2004.02.021

GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

June O. Song, Dong Seok Leem, Sang Ho Kim, J. S. Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10^-5 Ωcm². The light transmittance of the annealed samples is about 95% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.

Original language	English
Pages (from-to)	1597-1600
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2004.02.021
State	Published - Sep 2004
Externally published	Yes

Funding

This work was supported by the Basic Research program of the Korea Science and Engineering Foundation (Grant No. R01-2002-000-00356-0).

Funders	Funder number
Korea Science and Engineering Foundation	R01-2002-000-00356-0

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10.1016/j.sse.2004.02.021

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title = "GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact",

abstract = "Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10-5 Ωcm2. The light transmittance of the annealed samples is about 95% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.",

author = "Song, {June O.} and Leem, {Dong Seok} and Kim, {Sang Ho} and Kwak, {J. S.} and Nam, {O. H.} and Y. Park and Seong, {Tae Yeon}",

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T1 - GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

AU - Song, June O.

AU - Leem, Dong Seok

AU - Kim, Sang Ho

AU - Kwak, J. S.

AU - Nam, O. H.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2004/9

Y1 - 2004/9

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AB - Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10-5 Ωcm2. The light transmittance of the annealed samples is about 95% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.

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GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

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