Gamma-ray irradiation effects on electroluminescence from Au/extra thin Si-rich SiO2 film/p-Si structures

An Ping Li; Bo Rui Zhang; Yong Ping Qiao; Guo Gang Qin; Zhen Chang Ma; Wan Hua Zong

doi:10.1088/0256-307X/15/4/025

Gamma-ray irradiation effects on electroluminescence from Au/extra thin Si-rich SiO₂ film/p-Si structures

An Ping Li
, Bo Rui Zhang
, Yong Ping Qiao
, Guo Gang Qin
, Zhen Chang Ma
, Wan Hua Zong

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO₂ film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO₂ film a new blue EL band with a peak at around 480 nm was observed, and for the structure with a 300°C annealed Si-rich SiO₂ film the red EL band shifts from 670 to 660 nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.

Original language	English
Pages (from-to)	305-306
Number of pages	2
Journal	Chinese Physics Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/15/4/025
State	Published - 1998
Externally published	Yes

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10.1088/0256-307X/15/4/025

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@article{c2c1c3c09af0479b82734676daecdd63,

title = "Gamma-ray irradiation effects on electroluminescence from Au/extra thin Si-rich SiO2 film/p-Si structures",

abstract = "We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO2 film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO2 film a new blue EL band with a peak at around 480 nm was observed, and for the structure with a 300°C annealed Si-rich SiO2 film the red EL band shifts from 670 to 660 nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.",

author = "Li, \{An Ping\} and Zhang, \{Bo Rui\} and Qiao, \{Yong Ping\} and Qin, \{Guo Gang\} and Ma, \{Zhen Chang\} and Zong, \{Wan Hua\}",

year = "1998",

doi = "10.1088/0256-307X/15/4/025",

language = "English",

volume = "15",

pages = "305--306",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing",

number = "4",

}

TY - JOUR

T1 - Gamma-ray irradiation effects on electroluminescence from Au/extra thin Si-rich SiO2 film/p-Si structures

AU - Li, An Ping

AU - Zhang, Bo Rui

AU - Qiao, Yong Ping

AU - Qin, Guo Gang

AU - Ma, Zhen Chang

AU - Zong, Wan Hua

PY - 1998

Y1 - 1998

N2 - We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO2 film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO2 film a new blue EL band with a peak at around 480 nm was observed, and for the structure with a 300°C annealed Si-rich SiO2 film the red EL band shifts from 670 to 660 nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.

AB - We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO2 film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO2 film a new blue EL band with a peak at around 480 nm was observed, and for the structure with a 300°C annealed Si-rich SiO2 film the red EL band shifts from 670 to 660 nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.

UR - https://www.scopus.com/pages/publications/0032386422

U2 - 10.1088/0256-307X/15/4/025

DO - 10.1088/0256-307X/15/4/025

M3 - Article

AN - SCOPUS:0032386422

SN - 0256-307X

VL - 15

SP - 305

EP - 306

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 4

ER -

Gamma-ray irradiation effects on electroluminescence from Au/extra thin Si-rich SiO₂ film/p-Si structures

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