Gallium-catalyzed silicon oxide nanowire growth

Zhengwei Pan, Sheng Dai, Douglas H. Lowndes

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Silicon oxide nanowires tend to assemble into various complex morphologies through a metal-catalyzed vapor-liquid-solid (VLS) growth process. This article summarizes our recent efforts in the controlled growth of silicon oxide nanowire assemblies by using molten gallium as the catalyst and silicon wafer, SiO powder, or silane (SiH4) as the silicon sources. Silicon oxide nanowire assemblies with morphologies of carrotlike, cometlike, gourdlike, spindlelike, badmintonlike, sandwichlike, etc. were obtained. Although the morphologies of the nanowire assemblies are temperature- and silicon source-dependent, they share similar structural and compositional features: all the assemblies contain a microscale spherical liquid Ga ball and a highly aligned, closely packed amorphous silicon oxide nanowire bunch. The Ga-catalyzed silicon oxide nanowire growth reveals several interesting new nanowire growth phenomena that expand our knowledge of the conventional VLS nanowire growth mechanism.

Original languageEnglish
Pages (from-to)718-728
Number of pages11
JournalTsinghua Science and Technology
Volume10
Issue number6
DOIs
StatePublished - Dec 2005

Funding

Part of this work was conducted in the Oak Ridge National Laboratory (ORNL) and part was conducted in the Georgia Institute of Technology. ORNL is managed by UT-Battelle, LLC, for the US DOE under contract No. DE-AC05-00OR22725. Z.P. is grateful to Drs. Zhonglin Wang and Zurong Dai for their contributions.

FundersFunder number
U.S. Department of EnergyDE-AC05-00OR22725
Oak Ridge National Laboratory

    Keywords

    • Catalyst
    • GaN powder
    • Gallium
    • Si wafer
    • SiH gas
    • SiO powder
    • Silicon oxide nanowires
    • Vapor-liquid-solid (VLS)

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