Abstract
Using density functional theory, a series of calculations of structural and electronic properties of Si-substituted graphene were conducted. Through substituting C atoms by Si atoms on graphene in the present study, we found that the band gap of graphene can be continuously tuned with differently substitutional concentration. To utilize such substitution-induced band gap changes, we proposed a special design to fabricate graphene-based quantum well device.
Original language | English |
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Article number | 093108 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 9 |
DOIs | |
State | Published - Feb 28 2011 |
Externally published | Yes |
Funding
This study was financially supported from the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy. X. T. Zu was supported by the Royal Academy of Engineering-Research Exchanges with China and India Awards. Z. G. Wang was financially supported by the Young Scientist Foundation of Sichuan (Grant No. 09ZQ026-029). H. Y. Xiao was supported by the National Natural Science Foundation of China (Grant No. G0501040111004023). A portion of this research was performed using the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the U.S. Department of Energy’s Office of Biological and Environmental Research, located at Pacific Northwest National Laboratory and operated for DOE by Battelle.
Funders | Funder number |
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Royal Academy of Engineering-Research | |
Young Scientist Foundation of Sichuan | 09ZQ026-029 |
U.S. Department of Energy | |
Battelle | |
Basic Energy Sciences | |
Biological and Environmental Research | |
Pacific Northwest National Laboratory | |
Division of Materials Sciences and Engineering | |
National Natural Science Foundation of China | G0501040111004023 |