Functionalized graphene nanoroads for quantum well device

Y. G. Zhou, P. Yang, Z. G. Wang, H. Y. Xiao, X. T. Zu, X. Sun, M. A. Khaleel, F. Gao

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Using density functional theory, a series of calculations of structural and electronic properties of Si-substituted graphene were conducted. Through substituting C atoms by Si atoms on graphene in the present study, we found that the band gap of graphene can be continuously tuned with differently substitutional concentration. To utilize such substitution-induced band gap changes, we proposed a special design to fabricate graphene-based quantum well device.

Original languageEnglish
Article number093108
JournalApplied Physics Letters
Volume98
Issue number9
DOIs
StatePublished - Feb 28 2011
Externally publishedYes

Funding

This study was financially supported from the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy. X. T. Zu was supported by the Royal Academy of Engineering-Research Exchanges with China and India Awards. Z. G. Wang was financially supported by the Young Scientist Foundation of Sichuan (Grant No. 09ZQ026-029). H. Y. Xiao was supported by the National Natural Science Foundation of China (Grant No. G0501040111004023). A portion of this research was performed using the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the U.S. Department of Energy’s Office of Biological and Environmental Research, located at Pacific Northwest National Laboratory and operated for DOE by Battelle.

FundersFunder number
Royal Academy of Engineering-Research
Young Scientist Foundation of Sichuan09ZQ026-029
U.S. Department of Energy
Battelle
Basic Energy Sciences
Biological and Environmental Research
Pacific Northwest National Laboratory
Division of Materials Sciences and Engineering
National Natural Science Foundation of ChinaG0501040111004023

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