Fully inverted single-digit nanometer domains in ferroelectric films

Noureddine Tayebi; Yoshie Narui; Nathan Franklin; C. Patrick Collier; Konstantinos P. Giapis; Yoshio Nishi; Yuegang Zhang

doi:10.1063/1.3280371

Fully inverted single-digit nanometer domains in ferroelectric films

Noureddine Tayebi, Yoshie Narui, Nathan Franklin, C. Patrick Collier, Konstantinos P. Giapis, Yoshio Nishi, Yuegang Zhang

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (> 1 Tbit/in.²) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.² data storage densities.

Original language	English
Article number	023103
Journal	Applied Physics Letters
Volume	96
Issue number	2
DOIs	https://doi.org/10.1063/1.3280371
State	Published - 2010

Funding

Part of Y.Z.’s work was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

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AU - Giapis, Konstantinos P.

AU - Nishi, Yoshio

AU - Zhang, Yuegang

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Fully inverted single-digit nanometer domains in ferroelectric films

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