Abstract
Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (> 1 Tbit/in.2) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.2 data storage densities.
Original language | English |
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Article number | 023103 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 2 |
DOIs | |
State | Published - 2010 |
Funding
Part of Y.Z.’s work was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.