Abstract
Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire diameter. This is explained by the significantly enhanced indium (In) incorporation for nanowires with small diameters, due to the more dominant contribution for In incorporation from the lateral diffusion of In adatoms. Single InGaN/GaN nanowire LEDs with emission wavelengths across nearly the entire visible spectral were demonstrated on a single chip by varying the nanowire diameters. Such nanowire LEDs also exhibit superior electrical performance, with a turn-on voltage ∼2 V and negligible leakage current under reverse bias. The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer.
Original language | English |
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Pages (from-to) | 4608-4615 |
Number of pages | 8 |
Journal | Nano Letters |
Volume | 16 |
Issue number | 7 |
DOIs | |
State | Published - Jul 13 2016 |
Externally published | Yes |
Funding
This work was supported by the Natural Sciences and Engineering Research Council of Canada and Samsung Corporation. Part of the work was performed in the McGill Nanotools-Microfab facility. SEM studies were performed in the Facility for Electron Microscopy Research, McGill University. STEM and EELS investigations were performed in the Canadian Centre for Electron Microscopy, a national facility supported by NSERC, the Canada Foundation for Innovation under the MSI program, and McMaster University. The authors wish to thank Mr. David Laleyan and Dr. Songrui Zhao for their help with the operation and maintenance of the MBE systems and Mr. Travis Casagrande for the FIB sample preparation.
Keywords
- InGaN
- Nanowire
- display
- light-emitting diode
- quantum dot
- selective area growth