Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE

Matthew Brahlek, Arnab Sen Gupta, Jason Lapano, Joseph Roth, Hai Tian Zhang, Lei Zhang, Ryan Haislmaier, Roman Engel-Herbert

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

Driven by an ever-expanding interest in new material systems with new functionality, the growth of atomic-scale electronic materials by molecular beam epitaxy (MBE) has evolved continuously since the 1950s. Here, a new MBE technique called hybrid-MBE (hMBE) is reviewed that has been proven a powerful approach for tackling the challenge of growing high-quality, multicomponent complex oxides, specifically the ABO3 perovskites. The goal of this work is to (1) discuss the development of hMBE in a historical context, (2) review the advantageous surface kinetics and chemistry that enable the self-regulated growth of ABO3 perovskites, (3) layout the key components and technical challenges associated with hMBE, (4) review the status of the field and the materials that have been successfully grown by hMBE which demonstrate its general applicability, and (5) discuss the future of hMBE in regards to technical innovations and expansion into new material classes, which are aimed at expanding into industrial realm and at tackling new scientific endeavors.

Original languageEnglish
Article number1702772
JournalAdvanced Functional Materials
Volume28
Issue number9
DOIs
StatePublished - Feb 28 2018
Externally publishedYes

Funding

The authors would like to thank Julian Walker, Amanda Brahlek, and Venkatraman Gopalan, Maryam Salehi, and Seongshik Oh (Rutgers University) for discussions; and Margot Dormer for assistance with the acquisition of the data in Figure 12. M.B. and R.E.-H. acknowledge the Department of Energy (Grant DE-SC0012375) as the primary supporter for this work including data acquisition, research, organization, and the overall direction and writing of the manuscript. A.S.G., J.L., R.H., H.-T.Z., and R.E.-H. acknowledge National Science Foundation through the Penn State MRSEC program DMR-1420620, J.R., and R.E.-H. acknowledge DMR-1629477, L.Z., and R.E.-H. acknowledge the National Science Foundation through DMR-1352502 for data acquisition and discussion of the manuscript.

FundersFunder number
National Science Foundation1352502
Materials Research Science and Engineering Center, Harvard UniversityDMR-1420620

    Keywords

    • complex oxides
    • electronics
    • epitaxy
    • molecular beam epitaxy
    • nanoscale

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