Frank dislocation loops in HgTe/CdTe superlattices on CdTe/Si(211) B substrates

L. F. Fu, N. L. Okamoto, M. F. Chi, N. D. Browning, H. S. Jung, C. H. Grein

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Abstract

The defect structures in HgTe/CdTe superlattices (SLs) on CdTe/Si(211) B substrates grown by molecular-beam epitaxy have been investigated using (scanning) transmission electron microscopy and electron energy loss spectroscopy. Straight Hg-rich defects perpendicular to the SLs have been observed near the substrate while Frank dislocation loops (FDLs) are seen far from the substrate. The Hg-rich defects exhibit only a compositional variation with no significant atomic shift, and can be considered to be a remnant of a FDL which has climbed by thermal diffusion during the growth.

Original languageEnglish
Article number023104
JournalJournal of Applied Physics
Volume104
Issue number2
DOIs
StatePublished - 2008
Externally publishedYes

Funding

The experimental analysis was primarily performed at the NCEM, LBNL and supported by the Department of Energy (DOE) Contract No. DE-AC02-05CH11231. We acknowledge FEI Company at Hillsboro, OR for providing the facilities for partial work, and support under Contract No. FA8650-04-C-5423 by the Air Force Research Laboratory at Wright-Patterson for thin film growth. N.L.O. greatly appreciates the support from Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists. Dr. Charles R. Becker at University Wuerzburg is acknowledged for his helpful discussions. L.F.F. and N.L.O. contributed equally to this work.

FundersFunder number
Japan Society for the Promotion of Science for Young Scientists
NCEM
U.S. Department of EnergyDE-AC02-05CH11231
Lawrence Berkeley National Laboratory
Forschungskreis der ErnährungsindustrieFA8650-04-C-5423

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