Fractionally δ-doped oxide superlattices for higher carrier mobilities

Woo Seok Choi; Suyoun Lee; Valentino R. Cooper; Ho Nyung Lee

doi:10.1021/nl301844z

Fractionally δ-doped oxide superlattices for higher carrier mobilities

Woo Seok Choi, Suyoun Lee, Valentino R. Cooper, Ho Nyung Lee

Materials Science and Technology Div

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

A two-dimensional (2D) electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional δ-doping to control the interface's composition in La _xSr _1-xTiO ₃/SrTiO ₃ artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.

Original language	English
Pages (from-to)	4590-4594
Number of pages	5
Journal	Nano Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1021/nl301844z
State	Published - Sep 12 2012

Keywords

Perovskite oxide 2DEG
band-filling control
effective mass
fractional superlattices
multichannel conduction
pulsed laser epitaxy

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10.1021/nl301844z

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@article{e8b52055fb4b41f0bb668ef123ee323d,

title = "Fractionally δ-doped oxide superlattices for higher carrier mobilities",

abstract = "A two-dimensional (2D) electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional δ-doping to control the interface's composition in La xSr 1-xTiO 3/SrTiO 3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.",

keywords = "Perovskite oxide 2DEG, band-filling control, effective mass, fractional superlattices, multichannel conduction, pulsed laser epitaxy",

author = "Choi, {Woo Seok} and Suyoun Lee and Cooper, {Valentino R.} and Lee, {Ho Nyung}",

year = "2012",

month = sep,

day = "12",

doi = "10.1021/nl301844z",

language = "English",

volume = "12",

pages = "4590--4594",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - Fractionally δ-doped oxide superlattices for higher carrier mobilities

AU - Choi, Woo Seok

AU - Lee, Suyoun

AU - Cooper, Valentino R.

AU - Lee, Ho Nyung

PY - 2012/9/12

Y1 - 2012/9/12

N2 - A two-dimensional (2D) electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional δ-doping to control the interface's composition in La xSr 1-xTiO 3/SrTiO 3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.

AB - A two-dimensional (2D) electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional δ-doping to control the interface's composition in La xSr 1-xTiO 3/SrTiO 3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.

KW - Perovskite oxide 2DEG

KW - band-filling control

KW - effective mass

KW - fractional superlattices

KW - multichannel conduction

KW - pulsed laser epitaxy

UR - http://www.scopus.com/inward/record.url?scp=84866332701&partnerID=8YFLogxK

U2 - 10.1021/nl301844z

DO - 10.1021/nl301844z

M3 - Article

C2 - 22928746

AN - SCOPUS:84866332701

SN - 1530-6984

VL - 12

SP - 4590

EP - 4594

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Fractionally δ-doped oxide superlattices for higher carrier mobilities

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Keywords

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