Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications

  • K. Akarvardar
  • , S. Chen
  • , J. Vandersand
  • , B. Blalock
  • , R. Schrimpf
  • , B. Prothro
  • , C. Britton
  • , S. Cristoloveanu
  • , P. Gentil
  • , M. M. Mojarradi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

19 Scopus citations

Abstract

A novel voltage-controlled negative differential resistance device, using complementary SOI Four-Gate Transistors (G4-FETs) is presented. Innovative LC oscillator and Schmitt trigger circuits based on the G 4-FET NDR device are experimentally demonstrated.

Original languageEnglish
Title of host publication2006 IEEE international SOI Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages71-72
Number of pages2
ISBN (Print)1424402905, 9781424402908
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States
Duration: Oct 2 2006Oct 5 2006

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference2006 IEEE International Silicon on Insulator Conference, SOI
Country/TerritoryUnited States
CityNiagara Falls, NY
Period10/2/0610/5/06

Fingerprint

Dive into the research topics of 'Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications'. Together they form a unique fingerprint.

Cite this