Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications

K. Akarvardar; S. Chen; J. Vandersand; B. Blalock; R. Schrimpf; B. Prothro; C. Britton; S. Cristoloveanu; P. Gentil; M. M. Mojarradi

doi:10.1109/SOI.2006.284438

Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications

K. Akarvardar, S. Chen, J. Vandersand, B. Blalock, R. Schrimpf, B. Prothro, C. Britton, S. Cristoloveanu, P. Gentil, M. M. Mojarradi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

19 Scopus citations

Abstract

A novel voltage-controlled negative differential resistance device, using complementary SOI Four-Gate Transistors (G⁴-FETs) is presented. Innovative LC oscillator and Schmitt trigger circuits based on the G ⁴-FET NDR device are experimentally demonstrated.

Original language	English
Title of host publication	2006 IEEE international SOI Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	71-72
Number of pages	2
ISBN (Print)	1424402905, 9781424402908
DOIs	https://doi.org/10.1109/SOI.2006.284438
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States Duration: Oct 2 2006 → Oct 5 2006

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2006 IEEE International Silicon on Insulator Conference, SOI
Country/Territory	United States
City	Niagara Falls, NY
Period	10/2/06 → 10/5/06

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10.1109/SOI.2006.284438

Cite this

Akarvardar, K., Chen, S., Vandersand, J., Blalock, B., Schrimpf, R., Prothro, B., Britton, C., Cristoloveanu, S., Gentil, P., & Mojarradi, M. M. (2006). Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications. In 2006 IEEE international SOI Conference Proceedings (pp. 71-72). Article 4062886 (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.2006.284438

@inproceedings{48347e87899940228bc56938c8a4f52f,

title = "Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications",

abstract = "A novel voltage-controlled negative differential resistance device, using complementary SOI Four-Gate Transistors (G4-FETs) is presented. Innovative LC oscillator and Schmitt trigger circuits based on the G 4-FET NDR device are experimentally demonstrated.",

author = "K. Akarvardar and S. Chen and J. Vandersand and B. Blalock and R. Schrimpf and B. Prothro and C. Britton and S. Cristoloveanu and P. Gentil and Mojarradi, {M. M.}",

year = "2006",

doi = "10.1109/SOI.2006.284438",

language = "English",

isbn = "1424402905",

series = "Proceedings - IEEE International SOI Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "71--72",

booktitle = "2006 IEEE international SOI Conference Proceedings",

note = "2006 IEEE International Silicon on Insulator Conference, SOI ; Conference date: 02-10-2006 Through 05-10-2006",

}

Akarvardar, K, Chen, S, Vandersand, J, Blalock, B, Schrimpf, R, Prothro, B, Britton, C, Cristoloveanu, S, Gentil, P & Mojarradi, MM 2006, Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications. in 2006 IEEE international SOI Conference Proceedings., 4062886, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 71-72, 2006 IEEE International Silicon on Insulator Conference, SOI, Niagara Falls, NY, United States, 10/2/06. https://doi.org/10.1109/SOI.2006.284438

Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications. / Akarvardar, K.; Chen, S.; Vandersand, J. et al.
2006 IEEE international SOI Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2006. p. 71-72 4062886 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications

AU - Akarvardar, K.

AU - Chen, S.

AU - Vandersand, J.

AU - Blalock, B.

AU - Schrimpf, R.

AU - Prothro, B.

AU - Britton, C.

AU - Cristoloveanu, S.

AU - Gentil, P.

AU - Mojarradi, M. M.

PY - 2006

Y1 - 2006

N2 - A novel voltage-controlled negative differential resistance device, using complementary SOI Four-Gate Transistors (G4-FETs) is presented. Innovative LC oscillator and Schmitt trigger circuits based on the G 4-FET NDR device are experimentally demonstrated.

AB - A novel voltage-controlled negative differential resistance device, using complementary SOI Four-Gate Transistors (G4-FETs) is presented. Innovative LC oscillator and Schmitt trigger circuits based on the G 4-FET NDR device are experimentally demonstrated.

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DO - 10.1109/SOI.2006.284438

M3 - Conference contribution

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SN - 1424402905

SN - 9781424402908

T3 - Proceedings - IEEE International SOI Conference

SP - 71

EP - 72

BT - 2006 IEEE international SOI Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 IEEE International Silicon on Insulator Conference, SOI

Y2 - 2 October 2006 through 5 October 2006

ER -

Akarvardar K, Chen S, Vandersand J, Blalock B, Schrimpf R, Prothro B et al. Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications. In 2006 IEEE international SOI Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2006. p. 71-72. 4062886. (Proceedings - IEEE International SOI Conference). doi: 10.1109/SOI.2006.284438

Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications

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