Formation of vanadium-based ohmic contacts to n-GaN

June O. Song; Sang Ho Kim; Joon Seop Kwak; Tae Yeon Seong

doi:10.1063/1.1598284

Formation of vanadium-based ohmic contacts to n-GaN

June O. Song
, Sang Ho Kim
, Joon Seop Kwak
, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 ^-3-10^-4 ωcm² upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

Original language	English
Pages (from-to)	1154-1156
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.1598284
State	Published - Aug 11 2003
Externally published	Yes

Access to Document

10.1063/1.1598284

Cite this

@article{62868ebb09e44fc8a0890f9058a44a75,

title = "Formation of vanadium-based ohmic contacts to n-GaN",

abstract = "A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.",

author = "Song, \{June O.\} and Kim, \{Sang Ho\} and Kwak, \{Joon Seop\} and Seong, \{Tae Yeon\}",

year = "2003",

month = aug,

day = "11",

doi = "10.1063/1.1598284",

language = "English",

volume = "83",

pages = "1154--1156",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Formation of vanadium-based ohmic contacts to n-GaN

AU - Song, June O.

AU - Kim, Sang Ho

AU - Kwak, Joon Seop

AU - Seong, Tae Yeon

PY - 2003/8/11

Y1 - 2003/8/11

N2 - A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

AB - A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

UR - https://www.scopus.com/pages/publications/0041924963

U2 - 10.1063/1.1598284

DO - 10.1063/1.1598284

M3 - Article

AN - SCOPUS:0041924963

SN - 0003-6951

VL - 83

SP - 1154

EP - 1156

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Formation of vanadium-based ohmic contacts to n-GaN

Abstract

Access to Document

Other files and links

Fingerprint

Cite this