Formation of vanadium-based ohmic contacts to n-GaN

June O. Song; Sang Ho Kim; Joon Seop Kwak; Tae Yeon Seong

doi:10.1063/1.1598284

Formation of vanadium-based ohmic contacts to n-GaN

June O. Song, Sang Ho Kim, Joon Seop Kwak, Tae Yeon Seong

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Abstract

A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 ^-3-10^-4 ωcm² upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

Original language	English
Pages (from-to)	1154-1156
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.1598284
State	Published - Aug 11 2003
Externally published	Yes

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10.1063/1.1598284

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abstract = "A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.",

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AU - Song, June O.

AU - Kim, Sang Ho

AU - Kwak, Joon Seop

AU - Seong, Tae Yeon

PY - 2003/8/11

Y1 - 2003/8/11

N2 - A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

AB - A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Formation of vanadium-based ohmic contacts to n-GaN

Abstract

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