Formation of self-assembled domain structures in lithium niobate modified by Ar ions implantation

D. O. Alikin; E. I. Shishkin; E. V. Nikolaeva; V. Ya Shur; M. F. Sarmanova; A. V. Ievlev; M. S. Nebogatikov; N. V. Gavrilov

doi:10.1080/00150193.2010.489855

Formation of self-assembled domain structures in lithium niobate modified by Ar ions implantation

D. O. Alikin, E. I. Shishkin, E. V. Nikolaeva, V. Ya Shur, M. F. Sarmanova, A. V. Ievlev, M. S. Nebogatikov, N. V. Gavrilov

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Self-assembled formation of dense structures of oriented domain rays under application of uniform electric field was studied in single crystalline lithium niobate wafers with surface layers modified by Ar ion implantation. Two types of domain structures were observed: strictly oriented straight domain rays and cogged ones appeared due to the fingering effect. The piezoresponse force microscopy was used for high-resolution domain imaging. Geometrical characteristics of the domain patterns obtained for different strength of applied field were extracted by statistical analysis. The correlated nucleation mechanism was claimed to be responsible for the formation of observed self-assembled domain structures.

Original language	English
Pages (from-to)	35-42
Number of pages	8
Journal	Ferroelectrics
Volume	399
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.489855
State	Published - 2010
Externally published	Yes
Event	3rd International Symposium on Ferroelectric Domain Structuring, ISDS'09 - Ekaterinburg, Russian Federation Duration: Sep 13 2009 → Sep 18 2009

Funding

The research was made possible in part by RFBR (grants 08-02-12173-ofr, 08-02-99082-r-ofr, 10-02-96042-r-Ural-a, 10-02-00627-a), U.S. CRDF BRHE & FAE (PhD Award RNP 2.2.2.3.10017/Y4-P-05-11), by Federal Agency of Education (contract P870), by Federal Agency of Science and Innovation (contracts 02.740.11.0171 and 02.552.11.7069).

Funders	Funder number
FAE	RNP 2.2.2.3.10017/Y4-P-05-11
Federal Agency of Education	P870
U.S. CRDF BRHE
Russian Foundation for Basic Research	10-02-00627-a, 10-02-96042-r-Ural-a, 08-02-99082-r-ofr, 08-02-12173-ofr
Federal Agency for Science and Innovation	02.552.11.7069, 02.740.11.0171

Keywords

Lithium niobate
domains
implantation of ions
nanodomains
polarization reversal
surface modification

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10.1080/00150193.2010.489855

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title = "Formation of self-assembled domain structures in lithium niobate modified by Ar ions implantation",

abstract = "Self-assembled formation of dense structures of oriented domain rays under application of uniform electric field was studied in single crystalline lithium niobate wafers with surface layers modified by Ar ion implantation. Two types of domain structures were observed: strictly oriented straight domain rays and cogged ones appeared due to the fingering effect. The piezoresponse force microscopy was used for high-resolution domain imaging. Geometrical characteristics of the domain patterns obtained for different strength of applied field were extracted by statistical analysis. The correlated nucleation mechanism was claimed to be responsible for the formation of observed self-assembled domain structures.",

keywords = "Lithium niobate, domains, implantation of ions, nanodomains, polarization reversal, surface modification",

author = "Alikin, {D. O.} and Shishkin, {E. I.} and Nikolaeva, {E. V.} and Shur, {V. Ya} and Sarmanova, {M. F.} and Ievlev, {A. V.} and Nebogatikov, {M. S.} and Gavrilov, {N. V.}",

year = "2010",

doi = "10.1080/00150193.2010.489855",

language = "English",

volume = "399",

pages = "35--42",

journal = "Ferroelectrics",

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number = "1",

note = "3rd International Symposium on Ferroelectric Domain Structuring, ISDS'09 ; Conference date: 13-09-2009 Through 18-09-2009",

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TY - JOUR

T1 - Formation of self-assembled domain structures in lithium niobate modified by Ar ions implantation

AU - Alikin, D. O.

AU - Shishkin, E. I.

AU - Nikolaeva, E. V.

AU - Shur, V. Ya

AU - Sarmanova, M. F.

AU - Ievlev, A. V.

AU - Nebogatikov, M. S.

AU - Gavrilov, N. V.

PY - 2010

Y1 - 2010

N2 - Self-assembled formation of dense structures of oriented domain rays under application of uniform electric field was studied in single crystalline lithium niobate wafers with surface layers modified by Ar ion implantation. Two types of domain structures were observed: strictly oriented straight domain rays and cogged ones appeared due to the fingering effect. The piezoresponse force microscopy was used for high-resolution domain imaging. Geometrical characteristics of the domain patterns obtained for different strength of applied field were extracted by statistical analysis. The correlated nucleation mechanism was claimed to be responsible for the formation of observed self-assembled domain structures.

AB - Self-assembled formation of dense structures of oriented domain rays under application of uniform electric field was studied in single crystalline lithium niobate wafers with surface layers modified by Ar ion implantation. Two types of domain structures were observed: strictly oriented straight domain rays and cogged ones appeared due to the fingering effect. The piezoresponse force microscopy was used for high-resolution domain imaging. Geometrical characteristics of the domain patterns obtained for different strength of applied field were extracted by statistical analysis. The correlated nucleation mechanism was claimed to be responsible for the formation of observed self-assembled domain structures.

KW - Lithium niobate

KW - domains

KW - implantation of ions

KW - nanodomains

KW - polarization reversal

KW - surface modification

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DO - 10.1080/00150193.2010.489855

M3 - Conference article

AN - SCOPUS:77954805212

SN - 0015-0193

VL - 399

SP - 35

EP - 42

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 3rd International Symposium on Ferroelectric Domain Structuring, ISDS'09

Y2 - 13 September 2009 through 18 September 2009

ER -

Formation of self-assembled domain structures in lithium niobate modified by Ar ions implantation

Abstract

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Keywords

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