Formation of nanostructures in silicon by nanosecond-pulsed laser irradiation

J. D. Fowlkes, A. J. Pedraza, S. Jesse, C. M. Rouleau, D. A. Blom

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Silicon nanoparticles are formed during pulsed laser ablation under a background atmosphere of Ar gas. In this paper we have characterized the nanoparticles that are backscattered via collisions in the gas phase and redeposited on the target surface. Clustering in an O2/Ar gas atmosphere resulted in the formation of unique nanostructures that photoluminesce in the violet and blue-green portions of the electromagnetic spectrum. Ablating a (001) Si target in the presence of ultra-high purity (UHP) argon produced Si nanoparticles outside the irradiated region. The mean diameter of these particles decreases from 50 nm to 5 nm with increasing distance from the laser spot. The nanoparticle distribution can be induced to self-organize in linear arrays by simultaneously irradiating the nanoparticles as they deposit.

Original languageEnglish
Pages (from-to)F1311-F1316
JournalMaterials Research Society Symposium - Proceedings
Volume638
StatePublished - 2001
Externally publishedYes

Funding

This research was sponsored by the National Science Foundation Grant N° DMR-9901238 and by the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract DE-AC05-00OR22725.

FundersFunder number
UT-Battelle
National Science FoundationN° DMR-9901238
U.S. Department of EnergyDE-AC05-00OR22725
Oak Ridge National Laboratory

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