TY - JOUR
T1 - Formation of metallic nanoclusters in SiC by MeV ion implantation
AU - Ila, D.
AU - Williams, E. K.
AU - Elsamadicy, A.
AU - Gasic, B.
AU - Poker, D. B.
AU - Hensley, D. K.
AU - George, M. A.
AU - Ayoub, M. A.
AU - Larkin, David J.
PY - 1999
Y1 - 1999
N2 - We present the results of our investigation of producing nanoclusters of gold, silver, copper and tin in 6H-SiC. This is accomplished by implanting 1.0 MeV Au, 2.0 MeV Ag, 2.0 MeV Cu, and 160 keV Sn into the Si face of SiC at room or elevated temperature followed by annealing at various temperatures. Using optical absorption spectrophotometry, we determined the location of the absorption band for each metal nanocluster in SiC. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.
AB - We present the results of our investigation of producing nanoclusters of gold, silver, copper and tin in 6H-SiC. This is accomplished by implanting 1.0 MeV Au, 2.0 MeV Ag, 2.0 MeV Cu, and 160 keV Sn into the Si face of SiC at room or elevated temperature followed by annealing at various temperatures. Using optical absorption spectrophotometry, we determined the location of the absorption band for each metal nanocluster in SiC. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.
UR - http://www.scopus.com/inward/record.url?scp=0033728549&partnerID=8YFLogxK
U2 - 10.1557/proc-571-223
DO - 10.1557/proc-571-223
M3 - Article
AN - SCOPUS:0033728549
SN - 0272-9172
VL - 571
SP - 223
EP - 228
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
ER -