TY - JOUR
T1 - Formation of a buried soft layer in SiC for 'compliant substrate' by ion implantation
AU - Lioubtchenko, M.
AU - Hunn, J.
AU - Suvkhanov, A.
AU - Parikh, N.
AU - Bray, D.
PY - 1996
Y1 - 1996
N2 - Radiation damage and its removal have been studied in ion implanted 6H-SiC by Rutherford backscattering/Channeling (RBS). We have implanted Ga and Ti at 800°C using doses of 1 × 1016 to 2 × 1017 cm-2. The implanted samples have been subsequently annealed at 1050°C, and then at 1400°C for 30 sec to study the removal of damage produced during implantation. The energies of implanted species have been chose to obtain 20 - 40 nm projected ranges to form a buried metallic or graphitic layer. No significant damage removal has been observed after 1050°C anneal, however 1400°C annealing of 40 and 120 keV Ga implanted samples (fluence 2 × 1016 cm-2) resulted in significantly less damage as can be observed from RBS/Channeling data. In the case of Ti implanted samples annealing led to an appreciable increase in the channeled backscattering yield, which might be due to the formation of some new phase (e.g. TiSi or TiSi2) and may be related to distortions of the existing lattice.
AB - Radiation damage and its removal have been studied in ion implanted 6H-SiC by Rutherford backscattering/Channeling (RBS). We have implanted Ga and Ti at 800°C using doses of 1 × 1016 to 2 × 1017 cm-2. The implanted samples have been subsequently annealed at 1050°C, and then at 1400°C for 30 sec to study the removal of damage produced during implantation. The energies of implanted species have been chose to obtain 20 - 40 nm projected ranges to form a buried metallic or graphitic layer. No significant damage removal has been observed after 1050°C anneal, however 1400°C annealing of 40 and 120 keV Ga implanted samples (fluence 2 × 1016 cm-2) resulted in significantly less damage as can be observed from RBS/Channeling data. In the case of Ti implanted samples annealing led to an appreciable increase in the channeled backscattering yield, which might be due to the formation of some new phase (e.g. TiSi or TiSi2) and may be related to distortions of the existing lattice.
UR - http://www.scopus.com/inward/record.url?scp=0030361468&partnerID=8YFLogxK
U2 - 10.1557/proc-438-265
DO - 10.1557/proc-438-265
M3 - Conference article
AN - SCOPUS:0030361468
SN - 0272-9172
VL - 438
SP - 265
EP - 270
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Fall Meeting
Y2 - 2 December 1996 through 6 December 1996
ER -