Formation and relaxation of 2D island arrays in metal(100) homoepitaxy

C. R. Stoldt; A. M. Cadilhe; M. C. Bartelt; C. J. Jenks; P. A. Thiel; J. W. Evans

doi:10.1016/S0079-6816(98)00036-7

Formation and relaxation of 2D island arrays in metal(100) homoepitaxy

C. R. Stoldt, A. M. Cadilhe, M. C. Bartelt, C. J. Jenks, P. A. Thiel, J. W. Evans

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13 Scopus citations

Abstract

We present a comprehensive analysis of both the formation of near-square islands during deposition in submonolayer metal(100) homoepitaxy, as well as the subsequent post-deposition relaxation of these island arrays. We highlight recent fundamental advances in our understanding of the nucleation and growth of islands, as well as of the kinetic pathways controlling the relaxation of island arrays (including a study of the "collision" and coalescence of diffusing islands). Extensive Scanning Tunneling Microscopy results are presented for the Ag/Ag(100) system at 295K, and these are analyzed utilizing kinetic Monte Carlo simulations of appropriate lattice-gas models.

Original language	English
Pages (from-to)	67-77
Number of pages	11
Journal	Progress in Surface Science
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0079-6816(98)00036-7
State	Published - 1998
Externally published	Yes

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title = "Formation and relaxation of 2D island arrays in metal(100) homoepitaxy",

abstract = "We present a comprehensive analysis of both the formation of near-square islands during deposition in submonolayer metal(100) homoepitaxy, as well as the subsequent post-deposition relaxation of these island arrays. We highlight recent fundamental advances in our understanding of the nucleation and growth of islands, as well as of the kinetic pathways controlling the relaxation of island arrays (including a study of the {"}collision{"} and coalescence of diffusing islands). Extensive Scanning Tunneling Microscopy results are presented for the Ag/Ag(100) system at 295K, and these are analyzed utilizing kinetic Monte Carlo simulations of appropriate lattice-gas models.",

author = "Stoldt, {C. R.} and Cadilhe, {A. M.} and Bartelt, {M. C.} and Jenks, {C. J.} and Thiel, {P. A.} and Evans, {J. W.}",

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doi = "10.1016/S0079-6816(98)00036-7",

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T1 - Formation and relaxation of 2D island arrays in metal(100) homoepitaxy

AU - Stoldt, C. R.

AU - Cadilhe, A. M.

AU - Bartelt, M. C.

AU - Jenks, C. J.

AU - Thiel, P. A.

AU - Evans, J. W.

PY - 1998

Y1 - 1998

N2 - We present a comprehensive analysis of both the formation of near-square islands during deposition in submonolayer metal(100) homoepitaxy, as well as the subsequent post-deposition relaxation of these island arrays. We highlight recent fundamental advances in our understanding of the nucleation and growth of islands, as well as of the kinetic pathways controlling the relaxation of island arrays (including a study of the "collision" and coalescence of diffusing islands). Extensive Scanning Tunneling Microscopy results are presented for the Ag/Ag(100) system at 295K, and these are analyzed utilizing kinetic Monte Carlo simulations of appropriate lattice-gas models.

AB - We present a comprehensive analysis of both the formation of near-square islands during deposition in submonolayer metal(100) homoepitaxy, as well as the subsequent post-deposition relaxation of these island arrays. We highlight recent fundamental advances in our understanding of the nucleation and growth of islands, as well as of the kinetic pathways controlling the relaxation of island arrays (including a study of the "collision" and coalescence of diffusing islands). Extensive Scanning Tunneling Microscopy results are presented for the Ag/Ag(100) system at 295K, and these are analyzed utilizing kinetic Monte Carlo simulations of appropriate lattice-gas models.

UR - http://www.scopus.com/inward/record.url?scp=0032157802&partnerID=8YFLogxK

U2 - 10.1016/S0079-6816(98)00036-7

DO - 10.1016/S0079-6816(98)00036-7

M3 - Article

AN - SCOPUS:0032157802

SN - 0079-6816

VL - 59

SP - 67

EP - 77

JO - Progress in Surface Science

JF - Progress in Surface Science

IS - 1-4

ER -

Formation and relaxation of 2D island arrays in metal(100) homoepitaxy

Abstract

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