Abstract
Silica was implanted with Se ions at 4 MeV with nominal doses of 0.1, 0.3, 0.5, 1.0 and 3.0 × 1016 ions/cm2. The optical absorption was measured from 1.8 to 6.2 eV. Bands at 5.9 and 5 eV are observed in the absorption spectra. The magnitude of the absorption increases with increasing dose but the increase is variant with dose. Bands at 2.6, 3.7 and 4.8 eV are attributed to the presence of the Se. The 0.3 and 1.0 × 1016 samples were exposed to 5 eV KrF excimer irradiation with a fluence of 150 mJ/cm2 per pulse for pulse totals of 1.5 J/cm2. Bleaching of the 5 and 5.9 eV bands is observed and is attributed to the bleaching of defects at 5, 5.5 and 5.9 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 78-83 |
| Number of pages | 6 |
| Journal | Journal of Alloys and Compounds |
| Volume | 239 |
| Issue number | 1 |
| State | Published - May 15 1996 |
Funding
The authors acknowledge the support of The Research Corporation and Oak Ridge National Laboratory, managed by Lockheed Martin Energy Research Corp. for the US Department of Energy under contract number DE-AC05-96OR22464. Portions of these data have been analyzed using software which was originally developed for ion scattering spectra under Army Research Office contract DAAH04-95-1-0565.
| Funders | Funder number |
|---|---|
| Lockheed Martin Energy Research Corp. | |
| U.S. Department of Energy | DE-AC05-96OR22464 |
| Oak Ridge National Laboratory |