Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions

Michael G. Stanford; Pushpa Raj Pudasaini; Alex Belianinov; Nicholas Cross; Joo Hyon Noh; Michael R. Koehler; David G. Mandrus; Gerd Duscher; Adam J. Rondinone; Ilia N. Ivanov; T. Zac Ward; Philip D. Rack

doi:10.1038/srep27276

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe₂: Enabling nanoscale direct write homo-junctions

Michael G. Stanford, Pushpa Raj Pudasaini, Alex Belianinov, Nicholas Cross, Joo Hyon Noh, Michael R. Koehler, David G. Mandrus, Gerd Duscher, Adam J. Rondinone, Ilia N. Ivanov, T. Zac Ward, Philip D. Rack

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105 Scopus citations

Abstract

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe₂), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe₂, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe₂ thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe₂ is degraded more severely relative to electron transport after helium ion irradiation. Furthermore, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe₂ flakes, which constitutes an important advance towards two dimensional opto-electronic devices.

Original language	English
Article number	27276
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep27276
State	Published - Jun 6 2016

Funding

P.D.R. acknowledges support by US Department of Energy (DOE) under Grant No. DOE DE-SC0002136. P.R.P. and D.M. acknowledge funding by the Gordon and Betty Moore Foundation's EPiQS Initiative through Grant GBMF4416. T.Z.W. acknowledges support US Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division. M.G.S. acknowledges support from the National Defense Science and Engineering Graduate (NDSEG) Fellowship funded through the AFOSR. The authors acknowledge that the device synthesis, STEM imaging, Raman mapping, and helium ion exposures were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

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Stanford, M. G., Pudasaini, P. R., Belianinov, A., Cross, N., Noh, J. H., Koehler, M. R., Mandrus, D. G., Duscher, G., Rondinone, A. J., Ivanov, I. N., Ward, T. Z., & Rack, P. D. (2016). Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe₂: Enabling nanoscale direct write homo-junctions. Scientific Reports, 6, Article 27276. https://doi.org/10.1038/srep27276

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title = "Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions",

abstract = "Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Furthermore, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.",

author = "Stanford, {Michael G.} and Pudasaini, {Pushpa Raj} and Alex Belianinov and Nicholas Cross and Noh, {Joo Hyon} and Koehler, {Michael R.} and Mandrus, {David G.} and Gerd Duscher and Rondinone, {Adam J.} and Ivanov, {Ilia N.} and Ward, {T. Zac} and Rack, {Philip D.}",

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Stanford, MG, Pudasaini, PR, Belianinov, A, Cross, N, Noh, JH, Koehler, MR, Mandrus, DG, Duscher, G, Rondinone, AJ, Ivanov, IN , Ward, TZ & Rack, PD 2016, 'Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe₂: Enabling nanoscale direct write homo-junctions', Scientific Reports, vol. 6, 27276. https://doi.org/10.1038/srep27276

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AB - Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Furthermore, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.

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Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe₂: Enabling nanoscale direct write homo-junctions

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