TY - JOUR
T1 - First experimental results on active and slim-edge silicon sensors for XFEL
AU - Pancheri, L.
AU - Benkechcache, M. E.A.
AU - Betta, G. F.Dalla
AU - Xu, H.
AU - Verzellesi, G.
AU - Ronchin, S.
AU - Boscardin, M.
AU - Ratti, L.
AU - Grassi, M.
AU - Lodola, L.
AU - Malcovati, P.
AU - Vacchi, C.
AU - Manghisoni, M.
AU - Re, V.
AU - Traversi, G.
AU - Batignani, G.
AU - Bettarini, S.
AU - Casarosa, G.
AU - Giorgi, M.
AU - Forti, F.
AU - Paladino, A.
AU - Paoloni, E.
AU - Rizzo, G.
AU - Morsani, F.
AU - Fabris, L.
N1 - Publisher Copyright:
© 2016 IOP Publishing Ltd and Sissa Medialab srl.
PY - 2016/12/12
Y1 - 2016/12/12
N2 - This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 μm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 μm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.
AB - This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 μm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 μm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.
KW - Instrumentation for FEL
KW - Solid state detectors
KW - X-ray detectors
UR - http://www.scopus.com/inward/record.url?scp=85008164777&partnerID=8YFLogxK
U2 - 10.1088/1748-0221/11/12/C12018
DO - 10.1088/1748-0221/11/12/C12018
M3 - Article
AN - SCOPUS:85008164777
SN - 1748-0221
VL - 11
JO - Journal of Instrumentation
JF - Journal of Instrumentation
IS - 12
M1 - C12018
ER -