Field emission from carbon films deposited by controlled-low-energy beams and CVD sources

Douglas H. Lowndes, Vladimir I. Merkulov, L. R. Baylor, G. E. Jellison, D. B. Poker, S. Kim, M. H. Sohn, N. W. Paik

Research output: Contribution to journalConference articlepeer-review

Abstract

The role of doping and surface morphology in the field emission and energetic-beam control of carbon films was discussed. On a n-type Si substrate, carbon films with variable sp3 bonding fraction were deposited by ArF pulsed laser ablations (PLA). Direct metal ion-beam deposition (DMIBD) using primary Cesium beam was used to generate secondary propositions. DMIBD films were doped with Cesium whereas PLA films were found undoped. Highly-nanostructured materials were used to produce flat field emission cathodes.

Original languageEnglish
Pages (from-to)271-282
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
Volume585
StatePublished - 2000
EventFundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing - Boston, MA, USA
Duration: Nov 29 2000Dec 2 2000

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