Abstract
The role of doping and surface morphology in the field emission and energetic-beam control of carbon films was discussed. On a n-type Si substrate, carbon films with variable sp3 bonding fraction were deposited by ArF pulsed laser ablations (PLA). Direct metal ion-beam deposition (DMIBD) using primary Cesium beam was used to generate secondary propositions. DMIBD films were doped with Cesium whereas PLA films were found undoped. Highly-nanostructured materials were used to produce flat field emission cathodes.
Original language | English |
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Pages (from-to) | 271-282 |
Number of pages | 12 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 585 |
State | Published - 2000 |
Event | Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing - Boston, MA, USA Duration: Nov 29 2000 → Dec 2 2000 |