Ferromagnetism and carrier polarization of Mn-doped II-IV-V 2 chalcopyrites

P. R.C. Kent; T. C. Schulthess

doi:10.1063/1.1994622

Ferromagnetism and carrier polarization of Mn-doped II-IV-V ₂ chalcopyrites

P. R.C. Kent, T. C. Schulthess

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

Density functional calculations are used to investigate the magnetic properties of the Mn-doped II - IV - V ₂ chalcopyrites CdGeP ₂, ZnGeP ₂, ZnGeAs ₂, ZnSnP ₂, and ZnSnAs ₂. We find the Zn-based compounds have significantly larger ferromagnetic interactions than CdGeP ₂. Calculated valence band spin-splittings indicate the possibility of high carrier polarization in these systems. We do not find a simple relationship between lattice constant and exchange coupling, as suggested by simple models. Our results suggest the II - IV - V ₂ chalcopyrites are promising alternate high temperature dilute magnetic semiconductors.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	1369-1370
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994622
State	Published - Jun 30 2005
Externally published	Yes
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	07/26/04 → 07/30/04

Access to Document

10.1063/1.1994622

Cite this

@inproceedings{aa20d9de603747329f7258921e48615b,

title = "Ferromagnetism and carrier polarization of Mn-doped II-IV-V 2 chalcopyrites",

abstract = "Density functional calculations are used to investigate the magnetic properties of the Mn-doped II - IV - V 2 chalcopyrites CdGeP 2, ZnGeP 2, ZnGeAs 2, ZnSnP 2, and ZnSnAs 2. We find the Zn-based compounds have significantly larger ferromagnetic interactions than CdGeP 2. Calculated valence band spin-splittings indicate the possibility of high carrier polarization in these systems. We do not find a simple relationship between lattice constant and exchange coupling, as suggested by simple models. Our results suggest the II - IV - V 2 chalcopyrites are promising alternate high temperature dilute magnetic semiconductors.",

author = "Kent, {P. R.C.} and Schulthess, {T. C.}",

year = "2005",

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day = "30",

doi = "10.1063/1.1994622",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "1369--1370",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

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Kent, PRC & Schulthess, TC 2005, Ferromagnetism and carrier polarization of Mn-doped II-IV-V ₂ chalcopyrites. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 1369-1370, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 07/26/04. https://doi.org/10.1063/1.1994622

Ferromagnetism and carrier polarization of Mn-doped II-IV-V ₂ chalcopyrites. / Kent, P. R.C.; Schulthess, T. C.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 1369-1370 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Ferromagnetism and carrier polarization of Mn-doped II-IV-V 2 chalcopyrites

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AU - Schulthess, T. C.

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N2 - Density functional calculations are used to investigate the magnetic properties of the Mn-doped II - IV - V 2 chalcopyrites CdGeP 2, ZnGeP 2, ZnGeAs 2, ZnSnP 2, and ZnSnAs 2. We find the Zn-based compounds have significantly larger ferromagnetic interactions than CdGeP 2. Calculated valence band spin-splittings indicate the possibility of high carrier polarization in these systems. We do not find a simple relationship between lattice constant and exchange coupling, as suggested by simple models. Our results suggest the II - IV - V 2 chalcopyrites are promising alternate high temperature dilute magnetic semiconductors.

AB - Density functional calculations are used to investigate the magnetic properties of the Mn-doped II - IV - V 2 chalcopyrites CdGeP 2, ZnGeP 2, ZnGeAs 2, ZnSnP 2, and ZnSnAs 2. We find the Zn-based compounds have significantly larger ferromagnetic interactions than CdGeP 2. Calculated valence band spin-splittings indicate the possibility of high carrier polarization in these systems. We do not find a simple relationship between lattice constant and exchange coupling, as suggested by simple models. Our results suggest the II - IV - V 2 chalcopyrites are promising alternate high temperature dilute magnetic semiconductors.

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