Ferromagnetic semiconducting behavior of Mn1-xCrxTe compounds

Y. B. Li; Y. Q. Zhang; N. K. Sun; Q. Zhang; D. Li; J. Li; Z. D. Zhang

doi:10.1103/PhysRevB.72.193308

Ferromagnetic semiconducting behavior of Mn1-xCrxTe compounds

Y. B. Li
, Y. Q. Zhang
, N. K. Sun
, Q. Zhang
, D. Li
, J. Li
, Z. D. Zhang

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The magnetic and electrical transport properties of ferromagnetic semiconductor Mn1-xCrxTe (x=0.04, 0.08, and 0.14) compounds have been investigated. These compounds have ferromagnetic behavior with hysteresis loops showing a coercivity of 300-985Oe at 5K. The hysteresis loop is observed even at room temperature for Mn0.86Cr0.14Te. The substitution of Cr for Mn leads to a change from an antiferromagnetic state of MnTe to a ferromagnetic (or ferrimagnetic) state of Mn1-xCrxTe. Moreover, the incorporation of Cr into the host antiferromagnetic semiconductor MnTe lattice is confirmed by the structural characterization, which proves further that the ferromagnetic properties are not a result of the secondary phase. The typical feature of the thermally activated conduction processes for semiconductors has been verified by electrical property measurement.

Original language	English
Article number	193308
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.72.193308
State	Published - Nov 15 2005
Externally published	Yes

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10.1103/PhysRevB.72.193308

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title = "Ferromagnetic semiconducting behavior of Mn1-xCrxTe compounds",

abstract = "The magnetic and electrical transport properties of ferromagnetic semiconductor Mn1-xCrxTe (x=0.04, 0.08, and 0.14) compounds have been investigated. These compounds have ferromagnetic behavior with hysteresis loops showing a coercivity of 300-985Oe at 5K. The hysteresis loop is observed even at room temperature for Mn0.86Cr0.14Te. The substitution of Cr for Mn leads to a change from an antiferromagnetic state of MnTe to a ferromagnetic (or ferrimagnetic) state of Mn1-xCrxTe. Moreover, the incorporation of Cr into the host antiferromagnetic semiconductor MnTe lattice is confirmed by the structural characterization, which proves further that the ferromagnetic properties are not a result of the secondary phase. The typical feature of the thermally activated conduction processes for semiconductors has been verified by electrical property measurement.",

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doi = "10.1103/PhysRevB.72.193308",

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T1 - Ferromagnetic semiconducting behavior of Mn1-xCrxTe compounds

AU - Li, Y. B.

AU - Zhang, Y. Q.

AU - Sun, N. K.

AU - Zhang, Q.

AU - Li, D.

AU - Li, J.

AU - Zhang, Z. D.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - The magnetic and electrical transport properties of ferromagnetic semiconductor Mn1-xCrxTe (x=0.04, 0.08, and 0.14) compounds have been investigated. These compounds have ferromagnetic behavior with hysteresis loops showing a coercivity of 300-985Oe at 5K. The hysteresis loop is observed even at room temperature for Mn0.86Cr0.14Te. The substitution of Cr for Mn leads to a change from an antiferromagnetic state of MnTe to a ferromagnetic (or ferrimagnetic) state of Mn1-xCrxTe. Moreover, the incorporation of Cr into the host antiferromagnetic semiconductor MnTe lattice is confirmed by the structural characterization, which proves further that the ferromagnetic properties are not a result of the secondary phase. The typical feature of the thermally activated conduction processes for semiconductors has been verified by electrical property measurement.

AB - The magnetic and electrical transport properties of ferromagnetic semiconductor Mn1-xCrxTe (x=0.04, 0.08, and 0.14) compounds have been investigated. These compounds have ferromagnetic behavior with hysteresis loops showing a coercivity of 300-985Oe at 5K. The hysteresis loop is observed even at room temperature for Mn0.86Cr0.14Te. The substitution of Cr for Mn leads to a change from an antiferromagnetic state of MnTe to a ferromagnetic (or ferrimagnetic) state of Mn1-xCrxTe. Moreover, the incorporation of Cr into the host antiferromagnetic semiconductor MnTe lattice is confirmed by the structural characterization, which proves further that the ferromagnetic properties are not a result of the secondary phase. The typical feature of the thermally activated conduction processes for semiconductors has been verified by electrical property measurement.

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DO - 10.1103/PhysRevB.72.193308

M3 - Article

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

M1 - 193308

ER -

Ferromagnetic semiconducting behavior of Mn1-xCrxTe compounds

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