Ferromagnetic percolation in Mn xGe 1-x dilute magnetic semiconductor

A. P. Li, J. Shen, J. R. Thompson, H. H. Weitering

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Abstract

We have studied the magnetic and magnetotransport properties of Mn-doped Ge grown by molecular-beam epitaxy. This group-IV dilute ferromagnetic semiconductor exhibits two magnetic transitions. An upper critical temperature TC* (~112 K for x~0.05) is evident from the extrapolated Curie-Weiss susceptibility and from the Arrott plot analysis of anomalous Hall effect data. The existence of a lower critical temperature TC (~12 K for x~0.05) is established from ac susceptibility and magnetotransport data. The data are fully compatible with the existence of bound magnetic polarons or clusters below TC* which percolate at TC ≫ TC*.

Original languageEnglish
Article number152507
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number15
DOIs
StatePublished - 2005

Funding

The authors thank L. C. Feldman for the RBS calibrations of our samples. This work was sponsored by the LDRD Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725 and by the NSF under Contract No. DMR-0306239.

FundersFunder number
National Science Foundation
U.S. Department of EnergyDE-AC05-00OR22725
Oak Ridge National Laboratory

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