Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy

D. A. Tenne; P. Turner; J. D. Schmidt; M. Biegalski; Y. L. Li; L. Q. Chen; A. Soukiassian; S. Trolier-Mckinstry; D. G. Schlom; X. X. Xi; D. D. Fong; P. H. Fuoss; J. A. Eastman; G. B. Stephenson; C. Thompson; S. K. Streiffer

doi:10.1103/PhysRevLett.103.177601

Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy

D. A. Tenne, P. Turner, J. D. Schmidt, M. Biegalski, Y. L. Li, L. Q. Chen, A. Soukiassian, S. Trolier-Mckinstry, D. G. Schlom, X. X. Xi, D. D. Fong, P. H. Fuoss, J. A. Eastman, G. B. Stephenson, C. Thompson, S. K. Streiffer

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Abstract

We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180° domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

Original language	English
Article number	177601
Journal	Physical Review Letters
Volume	103
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.103.177601
State	Published - Oct 21 2009
Externally published	Yes

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Tenne, D. A., Turner, P., Schmidt, J. D., Biegalski, M., Li, Y. L., Chen, L. Q., Soukiassian, A., Trolier-Mckinstry, S., Schlom, D. G., Xi, X. X., Fong, D. D., Fuoss, P. H., Eastman, J. A., Stephenson, G. B., Thompson, C., & Streiffer, S. K. (2009). Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy. Physical Review Letters, 103(17), Article 177601. https://doi.org/10.1103/PhysRevLett.103.177601

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title = "Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy",

abstract = "We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180° domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.",

author = "Tenne, {D. A.} and P. Turner and Schmidt, {J. D.} and M. Biegalski and Li, {Y. L.} and Chen, {L. Q.} and A. Soukiassian and S. Trolier-Mckinstry and Schlom, {D. G.} and Xi, {X. X.} and Fong, {D. D.} and Fuoss, {P. H.} and Eastman, {J. A.} and Stephenson, {G. B.} and C. Thompson and Streiffer, {S. K.}",

year = "2009",

month = oct,

day = "21",

doi = "10.1103/PhysRevLett.103.177601",

language = "English",

volume = "103",

journal = "Physical Review Letters",

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Tenne, DA, Turner, P, Schmidt, JD, Biegalski, M, Li, YL, Chen, LQ, Soukiassian, A, Trolier-Mckinstry, S, Schlom, DG, Xi, XX, Fong, DD, Fuoss, PH, Eastman, JA, Stephenson, GB, Thompson, C & Streiffer, SK 2009, 'Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy', Physical Review Letters, vol. 103, no. 17, 177601. https://doi.org/10.1103/PhysRevLett.103.177601

TY - JOUR

T1 - Ferroelectricity in ultrathin BaTiO3 films

T2 - Probing the size effect by ultraviolet raman spectroscopy

AU - Tenne, D. A.

AU - Turner, P.

AU - Schmidt, J. D.

AU - Biegalski, M.

AU - Li, Y. L.

AU - Chen, L. Q.

AU - Soukiassian, A.

AU - Trolier-Mckinstry, S.

AU - Schlom, D. G.

AU - Xi, X. X.

AU - Fong, D. D.

AU - Fuoss, P. H.

AU - Eastman, J. A.

AU - Stephenson, G. B.

AU - Thompson, C.

AU - Streiffer, S. K.

PY - 2009/10/21

Y1 - 2009/10/21

N2 - We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180° domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

AB - We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180° domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

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U2 - 10.1103/PhysRevLett.103.177601

DO - 10.1103/PhysRevLett.103.177601

M3 - Article

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SN - 0031-9007

VL - 103

JO - Physical Review Letters

JF - Physical Review Letters

IS - 17

M1 - 177601

ER -

Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy

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