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Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films
Dixiong Wang
, Jeffrey Zheng
, Pariasadat Musavigharavi
, Wanlin Zhu
,
Alexandre C. Foucher
, Susan E. Trolier-Mckinstry
, Eric A. Stach
, Roy H. Olsson
Research output
:
Contribution to journal
›
Article
›
peer-review
100
Scopus citations
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Material Science
Nitride Compound
100%
Ferroelectric Material
100%
Aluminum
100%
Scandium
100%
Thin Films
100%
Film
66%
Piezoelectricity
33%
Oxide Surface
33%
Ferroelectricity
33%
Silicon Wafer
33%
Engineering
Nitride
100%
Room Temperature
100%
Thin Films
100%
Surface Oxide
50%
Coercive Field
50%
Characterization Method
50%
Quantitative Measurement
50%
Silicon Wafer
50%
Piezoelectric Coefficient
50%
Chemistry
Aluminum
100%
Scandium
100%
Ferroelectric Switching
100%
Nitride
100%
Ambient Reaction Temperature
66%
Piezoelectric Coefficient
33%
Ferroelectricity
33%
Silicon
33%
Physics
Thin Films
100%
Nitride
100%
Ferroelectric Material
100%
Room Temperature
66%
Piezoelectricity
33%
Ferroelectricity
33%