Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

Patrick D. Lomenzo; Qanit Takmeel; Chris M. Fancher; Chuanzhen Zhou; Nicholas G. Rudawski; Saeed Moghaddam; Jacob L. Jones; Toshikazu Nishida

doi:10.1109/LED.2015.2445352

Ferroelectric Si-Doped HfO₂ Device Properties on Highly Doped Germanium

Patrick D. Lomenzo, Qanit Takmeel, Chris M. Fancher, Chuanzhen Zhou, Nicholas G. Rudawski, Saeed Moghaddam, Jacob L. Jones, Toshikazu Nishida

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Ferroelectric Si-doped HfO₂ thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO₂ thin films is strongly dependent on the bottom interfaces. The Si-doped HfO₂ thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO₂ and Ge. The low-voltage operation and cycling stability of Si-doped HfO₂ ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.

Original language	English
Article number	7123616
Pages (from-to)	766-768
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	8
DOIs	https://doi.org/10.1109/LED.2015.2445352
State	Published - Aug 1 2015
Externally published	Yes

Keywords

FeFETs
Ferroelectrics
Ge
HfO

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10.1109/LED.2015.2445352

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title = "Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium",

abstract = "Ferroelectric Si-doped HfO2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO2 thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO2 and Ge. The low-voltage operation and cycling stability of Si-doped HfO2 ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.",

keywords = "FeFETs, Ferroelectrics, Ge, HfO",

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year = "2015",

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doi = "10.1109/LED.2015.2445352",

language = "English",

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T1 - Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

AU - Lomenzo, Patrick D.

AU - Takmeel, Qanit

AU - Fancher, Chris M.

AU - Zhou, Chuanzhen

AU - Rudawski, Nicholas G.

AU - Moghaddam, Saeed

AU - Jones, Jacob L.

AU - Nishida, Toshikazu

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Ferroelectric Si-doped HfO2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO2 thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO2 and Ge. The low-voltage operation and cycling stability of Si-doped HfO2 ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.

AB - Ferroelectric Si-doped HfO2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO2 thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO2 and Ge. The low-voltage operation and cycling stability of Si-doped HfO2 ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.

KW - FeFETs

KW - Ferroelectrics

KW - Ge

KW - HfO

UR - https://www.scopus.com/pages/publications/84937872437

U2 - 10.1109/LED.2015.2445352

DO - 10.1109/LED.2015.2445352

M3 - Article

AN - SCOPUS:84937872437

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 7123616

ER -

Ferroelectric Si-Doped HfO₂ Device Properties on Highly Doped Germanium

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Keywords

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