Ferroelectric Schottky diodes of CuInP2S6 nanosheet

Jinyuan Yao; Yongtao Liu; Shaoqing Ding; Yanglin Zhu; Zhiqiang Mao; Sergei V. Kalinin; Ying Liu

doi:10.1063/5.0160928

Ferroelectric Schottky diodes of CuInP₂S₆ nanosheet

Jinyuan Yao, Yongtao Liu, Shaoqing Ding, Yanglin Zhu, Zhiqiang Mao, Sergei V. Kalinin, Ying Liu

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Abstract

Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP₂S₆ (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current-voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.

Original language	English
Article number	142903
Journal	Applied Physics Letters
Volume	123
Issue number	14
DOIs	https://doi.org/10.1063/5.0160928
State	Published - Oct 2 2023

Funding

The growth of single crystals of CIPS used in this work was supported by the National Science Foundation through the Penn State 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF cooperative Agreement Nos. DMR-1539916 and DMR-2039351. Bulk of the work, including device, characterization, and data analysis, was supported as part of the center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences under Award Number DE-SC0021118. Useful discussions with Professor S. Trolier-Mckinstry and Professor T. Jackson are gratefully acknowledged.

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abstract = "Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP2S6 (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current-voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.",

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AU - Liu, Yongtao

AU - Ding, Shaoqing

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AU - Mao, Zhiqiang

AU - Kalinin, Sergei V.

AU - Liu, Ying

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N2 - Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP2S6 (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current-voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.

AB - Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP2S6 (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current-voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.

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Ferroelectric Schottky diodes of CuInP₂S₆ nanosheet

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