Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

Seo Hyeon Jo; Sung Gap Lee; Young Hie Lee

doi:10.1186/1556-276X-7-54

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

Seo Hyeon Jo
, Sung Gap Lee
, Young Hie Lee

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

In this study, Pb(Zr_0.52Ti_0.48)O₃/BiFeO₃ [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO₂(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm² and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10^-7 A/cm².

Original language	English
Article number	54
Journal	Nanoscale Research Letters
Volume	7
DOIs	https://doi.org/10.1186/1556-276X-7-54
State	Published - 2012
Externally published	Yes

Funding

This work was supported by a grant from the Korea Research Foundation (KRF) funded by the Korean government (MEST; no. 2009-0077690).

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10.1186/1556-276X-7-54

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title = "Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method",

abstract = "In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03\%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.",

author = "Jo, \{Seo Hyeon\} and Lee, \{Sung Gap\} and Lee, \{Young Hie\}",

year = "2012",

doi = "10.1186/1556-276X-7-54",

language = "English",

volume = "7",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

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TY - JOUR

T1 - Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

AU - Jo, Seo Hyeon

AU - Lee, Sung Gap

AU - Lee, Young Hie

PY - 2012

Y1 - 2012

N2 - In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

AB - In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

UR - https://www.scopus.com/pages/publications/84862950056

U2 - 10.1186/1556-276X-7-54

DO - 10.1186/1556-276X-7-54

M3 - Article

AN - SCOPUS:84862950056

SN - 1931-7573

VL - 7

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

M1 - 54

ER -

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

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