Ferroelectric films and devices

Angus I. Kingon; Stephen K. Streiffer

doi:10.1016/S1359-0286(99)80009-6

Ferroelectric films and devices

Angus I. Kingon
, Stephen K. Streiffer

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba,Sr)TiO₃ films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.

Original language	English
Pages (from-to)	39-44
Number of pages	6
Journal	Current Opinion in Solid State and Materials Science
Volume	4
Issue number	1
DOIs	https://doi.org/10.1016/S1359-0286(99)80009-6
State	Published - Feb 1999
Externally published	Yes

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10.1016/S1359-0286(99)80009-6

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@article{40b509a1f2ed48489bdb8aa7985d1bae,

title = "Ferroelectric films and devices",

abstract = "Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba,Sr)TiO3 films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.",

author = "Kingon, \{Angus I.\} and Streiffer, \{Stephen K.\}",

year = "1999",

month = feb,

doi = "10.1016/S1359-0286(99)80009-6",

language = "English",

volume = "4",

pages = "39--44",

journal = "Current Opinion in Solid State and Materials Science",

issn = "1359-0286",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Ferroelectric films and devices

AU - Kingon, Angus I.

AU - Streiffer, Stephen K.

PY - 1999/2

Y1 - 1999/2

N2 - Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba,Sr)TiO3 films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.

AB - Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba,Sr)TiO3 films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.

UR - https://www.scopus.com/pages/publications/0002858473

U2 - 10.1016/S1359-0286(99)80009-6

DO - 10.1016/S1359-0286(99)80009-6

M3 - Article

AN - SCOPUS:0002858473

SN - 1359-0286

VL - 4

SP - 39

EP - 44

JO - Current Opinion in Solid State and Materials Science

JF - Current Opinion in Solid State and Materials Science

IS - 1

ER -

Ferroelectric films and devices

Abstract

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