TY - JOUR
T1 - Ferroelectric films and devices
AU - Kingon, Angus I.
AU - Streiffer, Stephen K.
PY - 1999/2
Y1 - 1999/2
N2 - Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba,Sr)TiO3 films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.
AB - Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba,Sr)TiO3 films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=0002858473&partnerID=8YFLogxK
U2 - 10.1016/S1359-0286(99)80009-6
DO - 10.1016/S1359-0286(99)80009-6
M3 - Article
AN - SCOPUS:0002858473
SN - 1359-0286
VL - 4
SP - 39
EP - 44
JO - Current Opinion in Solid State and Materials Science
JF - Current Opinion in Solid State and Materials Science
IS - 1
ER -