Ferroelectric Domain Structure of [Formula presented] Epitaxial Thin Films

M. A. Zurbuchen; G. Asayama; D. G. Schlom; S. K. Streiffer

doi:10.1103/PhysRevLett.88.107601

Ferroelectric Domain Structure of [Formula presented] Epitaxial Thin Films

M. A. Zurbuchen, G. Asayama, D. G. Schlom, S. K. Streiffer

Research output: Contribution to journal › Article › peer-review

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Abstract

The domain structure in a ferroelectric with well-defined crystallography and negligible ferroelastic distortion [Formula presented] is reported. In contrast to prototypical ferroelectrics in which long-range elastic strain dictates the domain structure, in [Formula presented] the elastic term is insignificant, allowing dipole-dipole interactions and domain wall energies to dominate in determining the domain structure. Electron microscopy reveals ferroelectric domains that are irregularly shaped and highly curved. Out-of-phase boundary defects are shown to be weakly correlated with 90° ferroelectric domain structure.

Original language	English
Pages (from-to)	4
Number of pages	1
Journal	Physical Review Letters
Volume	88
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.88.107601
State	Published - 2002
Externally published	Yes

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10.1103/PhysRevLett.88.107601

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@article{b0b230af892248f1ba3aeee3835976fb,

title = "Ferroelectric Domain Structure of [Formula presented] Epitaxial Thin Films",

abstract = "The domain structure in a ferroelectric with well-defined crystallography and negligible ferroelastic distortion [Formula presented] is reported. In contrast to prototypical ferroelectrics in which long-range elastic strain dictates the domain structure, in [Formula presented] the elastic term is insignificant, allowing dipole-dipole interactions and domain wall energies to dominate in determining the domain structure. Electron microscopy reveals ferroelectric domains that are irregularly shaped and highly curved. Out-of-phase boundary defects are shown to be weakly correlated with 90° ferroelectric domain structure.",

author = "Zurbuchen, \{M. A.\} and G. Asayama and Schlom, \{D. G.\} and Streiffer, \{S. K.\}",

year = "2002",

doi = "10.1103/PhysRevLett.88.107601",

language = "English",

volume = "88",

pages = "4",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "10",

}

TY - JOUR

T1 - Ferroelectric Domain Structure of [Formula presented] Epitaxial Thin Films

AU - Zurbuchen, M. A.

AU - Asayama, G.

AU - Schlom, D. G.

AU - Streiffer, S. K.

PY - 2002

Y1 - 2002

N2 - The domain structure in a ferroelectric with well-defined crystallography and negligible ferroelastic distortion [Formula presented] is reported. In contrast to prototypical ferroelectrics in which long-range elastic strain dictates the domain structure, in [Formula presented] the elastic term is insignificant, allowing dipole-dipole interactions and domain wall energies to dominate in determining the domain structure. Electron microscopy reveals ferroelectric domains that are irregularly shaped and highly curved. Out-of-phase boundary defects are shown to be weakly correlated with 90° ferroelectric domain structure.

AB - The domain structure in a ferroelectric with well-defined crystallography and negligible ferroelastic distortion [Formula presented] is reported. In contrast to prototypical ferroelectrics in which long-range elastic strain dictates the domain structure, in [Formula presented] the elastic term is insignificant, allowing dipole-dipole interactions and domain wall energies to dominate in determining the domain structure. Electron microscopy reveals ferroelectric domains that are irregularly shaped and highly curved. Out-of-phase boundary defects are shown to be weakly correlated with 90° ferroelectric domain structure.

UR - https://www.scopus.com/pages/publications/85038336586

U2 - 10.1103/PhysRevLett.88.107601

DO - 10.1103/PhysRevLett.88.107601

M3 - Article

AN - SCOPUS:85038336586

SN - 0031-9007

VL - 88

SP - 4

JO - Physical Review Letters

JF - Physical Review Letters

IS - 10

ER -

Ferroelectric Domain Structure of [Formula presented] Epitaxial Thin Films

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