Ferroelectric Bi_3.25La_0.75Ti₃o₁₂ films of uniform a-axis orientation on silicon substrates

Engineering

• Silicon Substrate 100%
• Spontaneous Polarization 100%
• Growth Condition 50%
• High Growth Rate 50%
• Square Centimeter 50%
• Film Plane 50%
• Growing Film 50%
• Random Access Memory 50%
• Thin Films 50%
• Yttria-Stabilized Zirconia 50%
• Epitaxial Film 50%
• Pulsed Laser 50%

Material Science

• Silicon 100%
• Film 100%
• Ferroelectric Material 100%
• Pulsed Laser Deposition 20%
• Film Growth 20%
• Yttria Stabilized Zirconia 20%
• Bismuth 20%
• Thin Films 20%
• Epitaxial Film 20%