Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil

Taeyun Kim; Jacqueline N. Hanson; Alexei Gruverman; Angus I. Kingon; S. K. Streiffer

doi:10.1063/1.2217254

Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil

Taeyun Kim, Jacqueline N. Hanson, Alexei Gruverman, Angus I. Kingon, S. K. Streiffer

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We demonstrate that (Pb _0.9La _0.1)(Zr _0.65Ti _0.35) _0.975O ₃ (PLZT) (10/65/35) thin films that have a nominally relaxor composition and that are deposited by chemical solution deposition onto copper foil show polarization hysteresis. Ferroelectric domain switching and a shift in Curie temperature are also observed. This is in contrast to the non-hysteretic behavior of films with identical composition prepared on Pt/SiO ₂/Si substrates. This suggests that the mismatch in coefficient of thermal expansion between PLZT and copper induces a compressive strain in the PLZT during cooling after high temperature crystallization under low pQ ₂, and causes an out-of-plane polarization.

Original language	English
Article number	262907
Journal	Applied Physics Letters
Volume	88
Issue number	26
DOIs	https://doi.org/10.1063/1.2217254
State	Published - 2006
Externally published	Yes

Funding

The authors would like to thank J. Ihlefeld for the cold stage measurement. Work performed at ANL was supported by the U.S. Department of Energy, Basic Energy Sciences-Materials Sciences, through contract W-31-109-ENG-38.

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title = "Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil",

abstract = "We demonstrate that (Pb 0.9La 0.1)(Zr 0.65Ti 0.35) 0.975O 3 (PLZT) (10/65/35) thin films that have a nominally relaxor composition and that are deposited by chemical solution deposition onto copper foil show polarization hysteresis. Ferroelectric domain switching and a shift in Curie temperature are also observed. This is in contrast to the non-hysteretic behavior of films with identical composition prepared on Pt/SiO 2/Si substrates. This suggests that the mismatch in coefficient of thermal expansion between PLZT and copper induces a compressive strain in the PLZT during cooling after high temperature crystallization under low pQ 2, and causes an out-of-plane polarization.",

author = "Taeyun Kim and Hanson, {Jacqueline N.} and Alexei Gruverman and Kingon, {Angus I.} and Streiffer, {S. K.}",

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AU - Kim, Taeyun

AU - Hanson, Jacqueline N.

AU - Gruverman, Alexei

AU - Kingon, Angus I.

AU - Streiffer, S. K.

PY - 2006

Y1 - 2006

N2 - We demonstrate that (Pb 0.9La 0.1)(Zr 0.65Ti 0.35) 0.975O 3 (PLZT) (10/65/35) thin films that have a nominally relaxor composition and that are deposited by chemical solution deposition onto copper foil show polarization hysteresis. Ferroelectric domain switching and a shift in Curie temperature are also observed. This is in contrast to the non-hysteretic behavior of films with identical composition prepared on Pt/SiO 2/Si substrates. This suggests that the mismatch in coefficient of thermal expansion between PLZT and copper induces a compressive strain in the PLZT during cooling after high temperature crystallization under low pQ 2, and causes an out-of-plane polarization.

AB - We demonstrate that (Pb 0.9La 0.1)(Zr 0.65Ti 0.35) 0.975O 3 (PLZT) (10/65/35) thin films that have a nominally relaxor composition and that are deposited by chemical solution deposition onto copper foil show polarization hysteresis. Ferroelectric domain switching and a shift in Curie temperature are also observed. This is in contrast to the non-hysteretic behavior of films with identical composition prepared on Pt/SiO 2/Si substrates. This suggests that the mismatch in coefficient of thermal expansion between PLZT and copper induces a compressive strain in the PLZT during cooling after high temperature crystallization under low pQ 2, and causes an out-of-plane polarization.

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Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil

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