Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films

P. K. Baumann; G. R. Bai; S. K. Streiffer; O. Auciello; K. Ghosh; S. Stemmer; A. Munkholm; Carol Thompson; D. J. Kim; J. P. Maria; A. I. Kingon

Ferroelectric and piezoelectric properties of MOCVD Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ epitaxial thin films

P. K. Baumann
, G. R. Bai
, S. K. Streiffer
, O. Auciello
, K. Ghosh
, S. Stemmer
, A. Munkholm
, Carol Thompson
, D. J. Kim
, J. P. Maria
, A. I. Kingon

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We have grown epitaxial Pb(Mg_1/3Nb_2/3)O₃ (PMN) and (1-x)(Pb(Mg_1/3Nb_2/3)O₃)-x(PbTiO₃) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO₃ and SrRuO₃/SrTiO₃ substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with P_r≈18μC/cm² was obtained. Initial piezoresponse data are discussed.

Original language	English
Pages (from-to)	517-522
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	596
State	Published - 2000
Externally published	Yes
Event	Ferroelectric Thin Films VIII - Boston, MA, USA Duration: Nov 29 1999 → Dec 2 1999

Cite this

@article{ac477e0ac06e4c4b88916dddffbea6ad,

title = "Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films",

abstract = "We have grown epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x(PbTiO3) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5\%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5\% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18μC/cm2 was obtained. Initial piezoresponse data are discussed.",

author = "Baumann, \{P. K.\} and Bai, \{G. R.\} and Streiffer, \{S. K.\} and O. Auciello and K. Ghosh and S. Stemmer and A. Munkholm and Carol Thompson and Kim, \{D. J.\} and Maria, \{J. P.\} and Kingon, \{A. I.\}",

year = "2000",

language = "English",

volume = "596",

pages = "517--522",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Ferroelectric Thin Films VIII ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films

AU - Baumann, P. K.

AU - Bai, G. R.

AU - Streiffer, S. K.

AU - Auciello, O.

AU - Ghosh, K.

AU - Stemmer, S.

AU - Munkholm, A.

AU - Thompson, Carol

AU - Kim, D. J.

AU - Maria, J. P.

AU - Kingon, A. I.

PY - 2000

Y1 - 2000

N2 - We have grown epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x(PbTiO3) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18μC/cm2 was obtained. Initial piezoresponse data are discussed.

AB - We have grown epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x(PbTiO3) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18μC/cm2 was obtained. Initial piezoresponse data are discussed.

UR - https://www.scopus.com/pages/publications/0033695745

M3 - Conference article

AN - SCOPUS:0033695745

SN - 0272-9172

VL - 596

SP - 517

EP - 522

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films VIII

Y2 - 29 November 1999 through 2 December 1999

ER -

Ferroelectric and piezoelectric properties of MOCVD Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ epitaxial thin films

Abstract

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